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MBR3050ST PDF预览

MBR3050ST

更新时间: 2024-11-02 11:11:51
品牌 Logo 应用领域
强茂 - PANJIT 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 47K
描述
SCHOTTKY BARRIER RECTIFIERS

MBR3050ST 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-247包装说明:ROHS COMPLIANT, PLASTIC, TO-247S, TO-3PS, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.64Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:275 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:50 V表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR3050ST 数据手册

 浏览型号MBR3050ST的Datasheet PDF文件第2页 
MBR3020ST SERIES  
SCHOTTKY BARRIER RECTIFIERS  
CURRENT  
VOLTAGE  
30 Amperes  
20 to 100 Volts  
0.615(15.60)MAX.  
FEATURES  
0.520(13.20)  
0.504(12.80)  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
0.185(4.70)  
0.169(4.30)  
0.402(10.20)  
0.385(9.80)  
Flame Retardant Epoxy Molding Compound.  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency.  
0.118(3.0)  
MIN.  
• High current capability  
0.599(15.20)  
0.582(14.80)  
• Guardring for overvoltage protection  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
0.103(2.60)  
0.090(2.30)  
0.071(1.80)  
0.055(1.40)  
0.095(2.40)  
0.078(2.00)  
0.050(1.25)  
0.037(0.95)  
MECHANICAL DATA  
0.025(0.62)  
0.014(0.38)  
• Case: TO-247S/TO3PS molded plastic  
Terminals: solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
0.223(5.65)  
0.206(5.25)  
0.223(5.65)  
0.206(5.25)  
• Mounting Position: Any  
• Weight: 0.1932 ounces, 5.4803 grams.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR3020ST MBR3030ST MBR3040ST MBR3045ST MBR3050ST MBR3060ST MBR3080ST MBR3090ST MBR30100ST  
PARAMETER  
SYMBOL  
VRRM  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
20  
14  
20  
30  
21  
30  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
90  
63  
90  
100  
70  
Maximum RMS Voltage  
VRMS  
V
V
A
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
VDC  
100  
IF(AV)  
30  
Peak Forward Surge Current :8.3ms single  
half sine-wave superi mposed on rated load  
(JEDEC method)  
IFSM  
275  
A
V
Maximum Forward Voltage at 15A per leg  
VF  
0.70  
0.75  
0.8  
Maximum DC Reverse Current at  
Rated DC Blocking Voltage  
TJ=25 OC  
TJ=125O  
0.1  
20  
0.05  
20  
IR  
mA  
C
OC  
W
/
Typical Thermal Resistance  
RJC  
1.4  
Operating Junction and Storage Temperature  
Range  
T
J
,TSTG  
-55 to + 150  
-65 to + 175  
OC  
Note :  
Both Bonding and Chip structure are available.  
August 31,2010-REV.02  
PAGE . 1  

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