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MBR3060CT PDF预览

MBR3060CT

更新时间: 2024-01-28 08:30:03
品牌 Logo 应用领域
星合电子 - GXELECTRONICS 二极管局域网
页数 文件大小 规格书
2页 372K
描述
30.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 30.0 Amperes

MBR3060CT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.44
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR3060CT 数据手册

 浏览型号MBR3060CT的Datasheet PDF文件第2页 
MBR3035CT THRU MBR30100CT  
星合 子  
XINGHE ELECTRONICS  
30.0 AMPS. Schottky Barrier Rectifiers  
Voltage Range  
35 to 100 Volts  
30.0 Amperes  
Current  
TO-220  
Features  
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
Cases: JEDEC TO-220 molded plastic  
Terminals: Leads solderable per MIL-STD-750, Method 2026  
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR MBR MBR MBR MBR MBR  
Symbol  
Type Number  
Units  
3035  
CT  
3045  
CT  
3050  
CT  
3060  
CT  
3090 30100  
CT  
90  
63  
90  
CT  
100  
70  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
35  
24  
35  
45  
31  
45  
50  
35  
50  
60  
42  
60  
V
V
V
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified Current at  
30  
A
I(AV)  
IFRM  
TC=130oC  
Peak Repetitive Forward Current (Rated VR, Square  
Wave, 20KHz) at Tc=130oC  
30.0  
250  
A
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
A
A
IFSM  
IRRM  
Peak Repetitive Reverse Surge Current (Note 1)  
Maximum Instantaneous Forward Voltage at (Note 2)  
IF=15A, Tc=25OC  
1.0  
0.5  
0.7  
0.6  
0.82  
0.73  
0.75  
0.65  
-
0.84  
0.70  
0.94  
0.82  
IF=15A, Tc=125OC  
V
VF  
IF=30A, Tc=25OC  
IF=30A, Tc=125OC  
-
Maximum Instantaneous Reverse Current  
@ Tc=25at Rated DC Blocking Voltage Per Leg  
@ Tc=125(Note 2)  
0.2  
40  
0.2  
50  
0.2  
60  
mA  
mA  
IR  
Voltage Rate of Change, (Rated VR)  
dV/dt  
1,000  
V/uS  
RθJC  
/W  
Maximum Thermal Resistance Per Leg (Note 3)  
1.0  
1.5  
Cj  
TJ  
600  
460  
320  
pF  
Typical Junction Capacitance  
Operating Junction Temperature Range  
Storage Temperature Range  
-65 to +150  
-65 to +175  
TSTG  
Notes: 1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate.  
1
GAOMI XINGHE ELECTRONICSCO.,LTD.  
WWW.SDDZG.COM  
TEL:0536-2210359  
QQ:464768017  

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