Datasheet > MBR3060/3P

MBR3060/3P

更新时间： 2024-01-29 13:05:02

品牌	Logo	应用领域
ASEMI		高压
页数	文件大小	规格书
3页	611K
描述
Dual High-Voltage Schottky Rectifiers

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中文翻译

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数据手册

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MBR3060/3P 数据手册

MBR3060 THUR MBR3065

Dual High-Voltage Schottky Rectifiers

REV:1.08

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM= 60V

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

IF(AV)= 30A

VRRM= 65V

IF(AV)= 30A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

● Low Voltage Continued Circuit and Protection Circuit.

■ MBR3060、MBR3065 Schottky diode,in the manufacture

uses the main process technology includes: Silicon

epitaxial substrate, P+ loop technology,The potential

metal and the silicon alloy technology, the device uses

the two chip, the common cathode, the plastic half

package structure.

Polarity

Absolute Maximum Ratings

Item

Symbol MBR3060 MBR3065

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

VRRM

VDC

Unit

Average Rectified Forward Current TC=150℃

Whole Device

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Maximum Thermal Resistance Junction−to−Case

℃/W

RθJC

2.0

Electricity Character

Representat

ive

Test Condition

Unit

Item

Minimum

MBR3060 MBR3065

100

TJ =25℃

VR=VRRM

IF=15A

TJ =125℃

TJ =25℃

0.75

0.77

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