Datasheet > MBR3045ST_11

MBR3045ST_11

更新时间： 2024-09-23 11:11:51

品牌	Logo	应用领域
安森美 - ONSEMI		开关
页数	文件大小	规格书
5页	96K
描述
SWITCHMODE? Power Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR3045ST_11 数据手册

MBR3045ST,

MBRB3045CT-1

SWITCHMODE™

Power Rectifier

Features and Benefits

• Dual Diode Construction — Terminals 1 and 3 May Be Connected

for Parallel Operation at Full Rating

• 45 V Blocking Voltage

http://onsemi.com

• Low Forward Voltage Drop

SCHOTTKY BARRIER

RECTIFIER

• 175°C Operating Junction Temperature

• Pb−Free Packages are Available

Applications

30 AMPERES

45 VOLTS

• Power Supply − Output Rectification

• Power Management

• Instrumentation

Mechanical Characteristics

2, 4

• Case: Epoxy, Molded

• Weight (Approximately): 1.9 Grams (TO−220AB)

1.5 Grams (TO−262)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

MARKING

DIAGRAMS

• Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Epoxy Meets UL 94 V−0 @ 0.125 in

MAXIMUM RATINGS

TO−220AB

CASE 221A

STYLE 6

AYWW

B3045G

AKA

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

Average Rectified Current

(T = 130°C)

Per Device

Per Diode

F(AV)

Peak Repetitive Forward Current, per Diode

FRM

AYWW

B3045CTG

AKA

I PAK (TO−262)

CASE 418D

PLASTIC

(Square Wave, V = 45 V, 20 kHz)

Non−Repetitive Peak Surge Current (Surge

Applied at Rated Load Conditions,

Halfwave, Single Phase, 60 Hz)

150

FSM

Peak Repetitive Reverse Current, per Diode

(2.0 ms, 1.0 kHz)

2.0

°C

RRM

= Assembly Location

= Year

Storage Temperature Range

−65 to

stg

AKA

= Work Week

= Polarity Designator

= Pb−Free Device

+175

Operating Junction Temperature (Note 1)

−65 to

°C

+175

Peak Surge Junction Temperature

(Forward Current Applied)

J(pk)

175

°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Voltage Rate of Change (Rated V )

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The heat generated must be less than the thermal conductivity from

Junction−to−Ambient: dP /dT < 1/R .

Publication Order Number:

January, 2011 − Rev. 8

MBR3045ST/D

12 3 4 5

中文翻译

下载PDF

与MBR3045ST_11相关器件

型号	品牌	获取价格	描述	数据表
MBR3045STG	ONSEMI	获取价格	SWITCHMODE? Power Rectifier
MBR3045W	PFS	获取价格	30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR3045W	MCC	获取价格	30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR3045WT	VISHAY	获取价格	Schottky Rectifier, 2 x 15 A
MBR3045WT	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-247AD, PLASTIC
MBR3045WT	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-3P, 3 PIN
MBR3045WT	ROCHESTER	获取价格	15A, 45V, SILICON, RECTIFIER DIODE, TO-247, PLASTIC, CASE 340L-02, 3 PIN
MBR3045WT	MCC	获取价格	30 Amp Schottky Barrier Rectifier 20 to 60 Volts
MBR3045WT	ONSEMI	获取价格	SWITCHMODE Power Rectifier
MBR3045WT-C	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, Silicon, TO-247AD, PLASTIC PACKAGE-3

与MBR3045ST_11相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

76
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

67
SL74HC10N：高性能三输入与非门解析
2024-09-03

151
AIC1781A 电池充电控制器深度解析
2024-09-03

133

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR3045ST_11

MBR3045ST_11 数据手册

与MBR3045ST_11相关器件

与MBR3045ST_11相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MBR3045ST_11

MBR3045ST_11 数据手册

与MBR3045ST_11相关器件

与MBR3045ST_11相关文章

您还可以找

您在本页遇到什么问题？