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MBR3045WT

更新时间： 2024-09-23 12:19:55
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关局域网
页数 文件大小 规格书
4页 141K
描述
SWITCHMODE Power Rectifier

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中文翻译

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MBR3045WT 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：TO-247包装说明：R-PSFM-T3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.38Is Samacsys：N
其他特性：LOW FORWARD VOLTAGE应用：POWER
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.6 VJEDEC-95代码：TO-247
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
最大非重复峰值正向电流：200 A元件数量：2
相数：1端子数量：3
最高工作温度：150 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：235
认证状态：Not Qualified最大重复峰值反向电压：45 V
子类别：Rectifier Diodes表面贴装：NO
技术：SCHOTTKY端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：30Base Number Matches：1

MBR3045WT 数据手册

 浏览型号MBR3045WT的Datasheet PDF文件第2页浏览型号MBR3045WT的Datasheet PDF文件第3页浏览型号MBR3045WT的Datasheet PDF文件第4页 
MBR3045WT  
SWITCHMODEt  
Power Rectifier  
These state−of−the−art devices use the Schottky Barrier principle  
with a platinum barrier metal.  
Features  
http://onsemi.com  
• Dual Diode Construction; Terminals 1 and 3 may be Connected for  
Parallel Operation at Full Rating  
• Guardring for Stress Protection  
• Low Forward Voltage  
• 175°C Operating Junction Temperature  
• Popular TO−247 Package  
• Pb−Free Package is Available*  
SCHOTTKY BARRIER  
RECTIFIER  
30 AMPERES, 45 VOLTS  
1
2
4
Mechanical Characteristics  
3
• Case: Epoxy, Molded  
• Weight: 4.3 Grams (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
1
TO−247  
CASE 340L  
PLASTIC  
2
3
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
45  
V
RRM  
MARKING DIAGRAM  
V
RWM  
V
R
Average Rectified Forward Current  
I
A
A
A
A
F(AV)  
(Rated V , T = 105°C)  
Per Device  
Per Diode  
30  
15  
R
C
Peak Repetitive Forward Current,  
I
30  
200  
2.0  
MBR3045WT  
AYWWG  
FRM  
(Rated V , Square Wave, 20 kHz)  
R
Per Diode  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
RRM  
Peak Repetitive Reverse Current (2.0 ms,  
I
1.0 kHz) Per Diode (See Figure 6)  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Storage Temperature Range  
T
−65 to +175  
−65 to +175  
175  
°C  
°C  
°C  
stg  
Operating Junction Temperature (Note 1)  
T
J
= Pb−Free Package  
Peak Surge Junction Temperature  
(Forward Current Applied)  
T
J(pk)  
Voltage Rate of Change (Rated V )  
dv/dt  
10,000  
V/ms  
ORDERING INFORMATION  
R
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Device  
Package  
Shipping  
MBR3045WT  
TO−247  
30 Units/Rail  
30 Units/Rail  
1. The heat generated must be less than the thermal conductivity from  
MBR3045WTG  
TO−247  
(Pb−Free)  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
March, 2010 − Rev. 4  
MBR3045WT/D  
 
1234

中文翻译

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MBR3045WT 替代型号

型号 品牌 替代类型 描述 数据表
MBR3045WTG ONSEMI

类似代替

 SWITCHMODE Power Rectifier
STPS3045CW STMICROELECTRONICS

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