Datasheet > MBR3035CT_14

MBR3035CT_14

更新时间： 2024-11-21 01:08:55

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描述
Dual Common Cathode Schottky Rectifier

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中文翻译

获取价格

数据手册

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MBR3035CT_14 数据手册

MBR3035CT thru MBR30150CT

Taiwan Semiconductor

CREAT BY ART

Dual Common Cathode Schottky Rectifier

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

TO-220AB

MECHANICAL DATA

Case: TO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test,

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 5 in-lbs maximum

Weight: 1.9 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBR

PARAMETER

SYMBOL 3035 3045 3050 3060 3090 30100 30150 UNIT

100

150

105

150

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

200

Peak repetitive reverse surge current (Note 1)

1.0

0.5

Maximum instantaneous forward voltage (Note 2)

I_F=15A, T_J=25℃

0.7

0.6

0.77

0.67

0.84

0.70

0.94

0.82

0.95

0.92

1.02

0.98

0.1

I_F=15A, T_J=125℃

V_F

I_F=30A, T_J=25℃

0.82

0.73

I_F=30A, T_J=125℃

0.2

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

I_R

7.5

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

dV/dt

R_θJC

T_J

V/μs

^OC/W

^OC

1.0

1.5

Operating junction temperature range

Storage temperature range

- 55 to +150

^OC

T_STG

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Document Number: DS_D1308040

Version: J13

12 3 4

中文翻译

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