5秒后页面跳转
MBR3035PT PDF预览

MBR3035PT

更新时间: 2024-11-20 00:02:03
品牌 Logo 应用领域
SIRECTIFIER 二极管瞄准线功效局域网
页数 文件大小 规格书
2页 125K
描述
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。

MBR3035PT 数据手册

 浏览型号MBR3035PT的Datasheet PDF文件第2页 
MBR3030PT thru MBR3045PT  
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions TO-247AD  
A
C
A
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
A
C
A
C(TAB)  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
F
4.32 5.49 0.170 0.216  
A=Anode, C=Cathode, TAB=Cathode  
5.4  
6.2 0.212 0.244  
VRRM  
V
VRMS  
V
VDC  
V
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
MBR3030PT  
MBR3035PT  
MBR3040PT  
MBR3045PT  
30  
21  
30  
35  
40  
45  
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
35  
24.5  
28  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
40  
45  
31.5  
N
1.5 2.49 0.087 0.102  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
Maximum Average Forward Rectified Current @TC=125oC  
30  
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
IFSM  
200  
A
dv/dt  
Voltage Rate Of Change (Rated VR)  
IF=20A @TJ=25oC  
Maximum Forward  
Voltage (Note 1)  
10000  
V/us  
-
IF=20A @TJ=125oC  
IF=30A @TJ=25oC  
IF=30A @TJ=125oC  
0.60  
0.76  
0.72  
VF  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
1
60  
IR  
mA  
@TJ=125oC  
1.4  
oC/W  
pF  
oC  
ROJC  
CJ  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance Per Element (Note 3)  
Operating Temperature Range  
500  
-55 to +150  
-55 to +175  
TJ  
TSTG  
Storage Temperature Range  
oC  
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.  
2. Thermal Resistance Junction To Case.  
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: TO-247AD molded plastic  
* Polarity: As marked on the body  
* Weight: 0.2 ounces, 5.6 grams  
* Mounting position: Any  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  

与MBR3035PT相关器件

型号 品牌 获取价格 描述 数据表
MBR3035PT_1 TSC

获取价格

30.0 AMPS. Schottky Barrier Rectifiers
MBR3035PT_11 TSC

获取价格

30.0AMPS. Schottky Barrier Rectifiers
MBR3035PT_14 TSC

获取价格

Dual Common Cathode Schottky Rectifier
MBR3035PT_15 VISHAY

获取价格

Dual Common Cathode Schottky Rectifier
MBR3035PT-BP MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247, PLASTIC P
MBR3035PT-C SENSITRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247AD, PLASTIC
MBR3035PT-E3 VISHAY

获取价格

DIODE 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, PLASTIC, TO-3P, 3 PIN, Rectifier Dio
MBR3035PT-E3/45 VISHAY

获取价格

DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PI
MBR3035PTP MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247, PLASTIC P
MBR3035PTR THINKISEMI

获取价格

30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers