Datasheet > MBR3035PT

MBR3035PT

更新时间： 2024-11-20 00:00:23

品牌	Logo	应用领域
美台 - DIODES		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	67K
描述
30A SCHOTTKY BARRIER RECTIFIER

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中文翻译

获取价格

数据手册

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MBR3035PT 数据手册

MBR3030PT - MBR3060PT

30A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward

Voltage Drop

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

Plastic Material: UL Flammability

Classification Rating 94V-0

TO-3P

Dim

Min

3.20

Max

3.50

4.59

5.16

20.80

19.70

2.10

21.30

20.20

2.40

0.51

0.76

15.90

1.70

16.40

2.70

3.10Æ

3.50

3.30Æ

4.51

*2 Places

Mechanical Data

5.20

5.70

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Marking: Type Number

Weight: 5.6 grams (approx.)

Mounting Position: Any

1.12

1.22

1.93

2.18

2.97

3.22

11.70

12.80

4.30 Typical

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBR

Characteristic

Symbol

Unit

3030PT 3035PT 3040PT 3045PT 3050PT 3060PT

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

24.5

31.5

Average Rectified Output Current

@ T_C= 125°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

200

Forward Voltage Drop

per element (Note 3)

@ I_F= 20A, T_C

= 25°C

0.65

0.60

0.75

0.65

V_FM

I_RM

@ I_F= 20A, T_C= 125°C

Peak Reverse Current

at Rated DC Blocking Voltage, per element @ T_C= 125°C

@ T_C25°C

1.0

5.0

100

C_j

Typical Junction Capacitance

(Note 2)

(Note 1)

700

K/W

V/µs

°C

R_qJc

Typical Thermal Resistance Junction to Case

Voltage Rate of Change (Rated V_R)

Operating and Storage Temperature Range

1.4

2.0

dV/dt

T_j,T_STG

10,000

-65 to +150

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Pulse width £300 ms, duty cycle £2%.

DS23017 Rev. E-2

1 of 2

MBR3030PT - MBR3060PT

中文翻译

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与MBR3035PT相关器件

型号	品牌	获取价格	描述	数据表
MBR3035PT_1	TSC	获取价格	30.0 AMPS. Schottky Barrier Rectifiers
MBR3035PT_11	TSC	获取价格	30.0AMPS. Schottky Barrier Rectifiers
MBR3035PT_14	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR3035PT_15	VISHAY	获取价格	Dual Common Cathode Schottky Rectifier
MBR3035PT-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247, PLASTIC P
MBR3035PT-C	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247AD, PLASTIC
MBR3035PT-E3	VISHAY	获取价格	DIODE 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, PLASTIC, TO-3P, 3 PIN, Rectifier Dio
MBR3035PT-E3/45	VISHAY	获取价格	DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PI
MBR3035PTP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247, PLASTIC P
MBR3035PTR	THINKISEMI	获取价格	30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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