Datasheet > MBR3035-F-CT

MBR3035-F-CT

更新时间： 2024-09-26 01:25:03

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海德 - HDSEMI		/
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3页	1298K
描述
TO-220 Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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MBR3035-F-CT 数据手册

MBR3035(F)CT THRU MBR30200(F)CT

HD TO122

TO-220 Plastic-Encapsulate Diodes

Schottky Rectifier

Features

●I

30A

ITO- 220AB

TO- 220AB

●VRRM

35V-200V

●High surge current capability

Applications

●Rectifier

Marking

● MBR30XX(F)CT

PIN 1

PIN 3

PIN 2

CASE

XX From 35 To 200

MBR30 -(F)CT

Item

Symbol

Unit

Test Conditions

45 50 60 90 100

150 200

V_RRM

I_o

Repetitive Peak Reverse Voltage

Average Rectified Output Current

45 50 60 90

100

60HZ Half-sine wave, Resistance

load, Tc(Fig.1)

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

200

T_J

℃

-55~+150

Junction Temperature

Storage Temperature

T_STG

-55 ~ +150

Electrical Characteristics (T =25℃ Unless otherwise specified）

MBR30 -(F)CT

Item

Peak Forward Voltage

Peak Reverse Current

Thermal

Symbol

Unit

Test Condition

150 200

0.95

45 50 60 90 100

V_F

I_F=15.0A

0.8

0.85

I_RRM1

I_RRM2

T =25℃

0.1

V_RM=V_RRM

T =125℃

1.5

R_θ

℃/W

J-A

Resistance(Typical)

(Note1)

Typical Junction

Capacitance(Note2)

650

NOTE1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

NOTE2. Leads maintained at ambient temperature at a distance of 9.5mm from the case

igh Diode Semiconductor

12 3

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