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MBR3035PT-BP PDF预览

MBR3035PT-BP

更新时间: 2024-11-20 13:11:11
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 131K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247, PLASTIC PACKAGE-3

MBR3035PT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.14
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:2
相数:1端子数量:3
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:35 V表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR3035PT-BP 数据手册

 浏览型号MBR3035PT-BP的Datasheet PDF文件第2页浏览型号MBR3035PT-BP的Datasheet PDF文件第3页 
MBR3020  
THRU  
M C C  
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21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
MBR30100  
30 Amp  
Schottky Barrier  
Rectifier  
Features  
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton  
Guard ring for transient protection  
Low power loss high efficiency  
20 to 100 Volts  
High surge capacity, High current capability  
Maximum Ratings  
TO-3  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
A
N
Maximum  
Maximum DC  
Blocking  
E
MCC  
Recurrent  
Maximum  
C
K
Part Number Peak Reverse RMS Voltage  
Voltage  
Voltage  
MBR3020  
MBR3030  
MBR3035  
MBR3040  
MBR3045  
MBR3060  
MBR3080  
MBR30100  
20V  
30V  
35V  
40V  
45V  
60V  
80V  
100V  
14V  
21V  
24.5V  
28V  
31.5V  
42V  
56V  
20V  
30V  
35V  
40V  
45V  
60V  
80V  
100V  
PIN 1:  
PIN 2:  
CASE:  
ANODE  
ANODE  
CATHODE  
D
U
V
L
H
2
1
G
B
70V  
Q
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
INCHES  
MIN MAX  
1.550 REF  
Average Forward  
Current  
IF(AV)  
30 A  
TL =105°C  
MM  
DIM  
MIN  
MAX  
Peak Forward Surge  
Current  
IFSM  
400A 8.3ms, half sine  
A
B
C
D
E
G
H
K
L
N
Q
U
V
39.37 REF  
-----  
.250  
.038  
.055  
.430 BSC  
.215 BSC  
.440  
.665 BSC  
-----  
.151  
1.187 BSC  
.131 1.88  
1.050  
-----  
6.35  
0.97  
1.40  
26.67  
.335  
.043  
.070  
8.51  
1.09  
1.77  
Maximum  
IFM = 30.0A;  
Instantaneous  
Forward Voltage  
MBR3020-3045  
MBR3060  
MBR3080-30100  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
TA = 25°C  
10.92 BSC  
5.46 BSC  
.63 V  
.75 V  
.84 V  
.480  
11.18  
12.19  
16.89 BSC  
.830  
.165  
-----  
3.84  
21.08  
4.19  
IR  
1.0 mA TA = 25°C  
30.15 BSC  
3.33 4.77  
Typical Junction  
Capacitance  
CJ  
200pF Measured at  
1.0MHz, VR=4.0V  
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%  
www.mccsemi.com  

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