MBR3020
THRU
MBR30100
星合 子
XINGHE ELECTRONICS
Rectifier
100 V olts
Schottky Barrier
2
0 to
mp
30
A
Features
TO-3
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
A
N
E
C
K
PIN 1:
PIN 2:
CASE:
ANODE
ANODE
CATHODE
D
Maximum Ratings
U
L
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
V
H
Maximum
Recurrent
Maximum DC
Blocking
2
1
G
B
MCC
Maximum
Part Number Peak Reverse RMS Voltage
Voltage
Voltage
Q
MBR3020
MBR3030
MBR3035
MBR3040
MBR3045
MBR3060
MBR3080
MBR30100
20V
30V
35V
40V
45V
60V
80V
100V
14V
21V
24.5V
28V
31.5V
42V
56V
20V
30V
35V
40V
45V
60V
80V
100V
DIMENSIONS
INCHES
MIN MAX
1.550 REF
MM
DIM
MIN
MAX
A
B
C
D
E
G
H
K
L
N
Q
U
V
39.37 REF
-----
.250
.038
.055
.430 BSC
.215 BSC
.440
.665 BSC
-----
.151
1.187 BSC
.131 1.88
1.050
-----
6.35
0.97
1.40
26.67
.335
.043
.070
8.51
1.09
1.77
70V
10.92 BSC
5.46 BSC
.480
11.18
12.19
16.89 BSC
Electrical Characteristics @ 25°C Unless Otherwise Specified
.830
.165
-----
3.84
21.08
4.19
Average Forward
Current
IF(AV)
30 A
TL =105°C
30.15 BSC
3.33 4.77
Peak Forward Surge
Current
IFSM
400A 8.3ms, half sine
Maximum
IFM = 30.0A;
Instantaneous
Forward Voltage
MBR3020-3045
MBR3060
MBR3080-30100
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
VF
TA = 25°C
.63 V
.75 V
.84 V
IR
1.0 mA TA = 25°C
Typical Junction
Capacitance
CJ
200pF Measured at
1.0MHz, VR=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
1
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