Datasheet > MBR3035WTPBF_12

MBR3035WTPBF_12

更新时间： 2024-11-20 11:11:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	161K
描述
Schottky Rectifier, 2 x 15 A

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MBR3035WTPBF_12 数据手册

VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 2 x 15 A

FEATURES

Base

common

• 150 °C T_Joperation

cathode

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

TO-247AC

Anode

• Compliant to RoHS Directive 2002/95/EC

Common

cathode

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

PRODUCT SUMMARY

Package

TO-247AC

2 x 15 A

I_F(AV)

DESCRIPTION

V_R

35 V, 45 V

The VS-MBR30..WT... center tap Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. The proprietary barrier technology allows for

reliable operation up to 150 °C junction temperature. Typical

applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

V_Fat I_F

See Electrical table

100 mA at 125 °C

150 °C

_RMmax.

T_Jmax.

Diode variation

E_AS

Common cathode

See Electrical table

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

I_FRM

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform (per device)

T_C= 125 °C (per leg)

35/45

1020

t_p= 5 μs sine

20 Apk, T_J= 125 °C

Range

V_F

0.60

T_J

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL VS-MBR3035WTPbF VS-MBR3035WT-N3 VS-MBR3045WTPbF VS-MBR3045WT-N3 UNITS

Maximum DC reverse

voltage

V_R

Maximumworkingpeak

reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_C= 125 °C, rated V_R

VALUES

UNITS

per leg

Maximum average

forward current

I_F(AV)

per device

Peak repetitive forward current per leg

I_FRM

Rated V_R, square wave, 20 kHz T_C= 125 °C

Following any rated load

condition and with rated

_RRMapplied

5 µs sine or 3 µs rect. pulse

1020

Non-repetitive peak surge current

I_FSM

Surge applied at rated load conditions half wave,

single phase, 60 Hz

200

2.0

Peak repetitive reverse surge current

I_RRM

2.0 µs 1.0 kHz

Revision: 30-Aug-11

Document Number: 94293

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与MBR3035WTPBF_12相关器件

型号	品牌	获取价格	描述	数据表
MBR3035WT-S	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, Silicon, TO-247AD, PLASTIC PACKAGE-3
MBR3040	GXELECTRONICS	获取价格	30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR3040	MCC	获取价格	30 Amp Rectifier 20 to 100 Volts Schottky Barrier
MBR3040	ASEMI	获取价格	Dual High-Voltage Schottky Rectifiers
MBR3040	PFS	获取价格	Schottky Barrier Rectifier
MBR3040	NJSEMI	获取价格	Diode Schottky 40V 30A 3-Pin(2+Tab) TO-3
MBR3040BCT	LGE	获取价格	30A Surface Mount High Power Schottky Barrier Rectifiers
MBR3040CD	ANBON	获取价格	TO-252AB
MBR3040CD-Q1	ANBON	获取价格	TO-252AB
MBR3040CG	ANBON	获取价格	TO-263AB

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