Datasheet > MBR3035WTPBF_12

MBR3035WTPBF_12

更新时间： 2024-02-12 19:06:57

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	161K
描述
Schottky Rectifier, 2 x 15 A

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中文翻译

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数据手册

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MBR3035WTPBF_12 数据手册

VS-MBR30..WTPbF Series, VS-MBR30..WT-N3 Series

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 2 x 15 A

FEATURES

Base

common

• 150 °C T_Joperation

cathode

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• Guard ring for enhanced ruggedness and long

term reliability

TO-247AC

Anode

• Compliant to RoHS Directive 2002/95/EC

Common

cathode

• Designed and qualified according to JEDEC-JESD47

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

PRODUCT SUMMARY

Package

TO-247AC

2 x 15 A

I_F(AV)

DESCRIPTION

V_R

35 V, 45 V

The VS-MBR30..WT... center tap Schottky rectifier has been

optimized for very low forward voltage drop, with moderate

leakage. The proprietary barrier technology allows for

reliable operation up to 150 °C junction temperature. Typical

applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

V_Fat I_F

See Electrical table

100 mA at 125 °C

150 °C

_RMmax.

T_Jmax.

Diode variation

E_AS

Common cathode

See Electrical table

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

I_FRM

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform (per device)

T_C= 125 °C (per leg)

35/45

1020

t_p= 5 μs sine

20 Apk, T_J= 125 °C

Range

V_F

0.60

T_J

- 65 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL VS-MBR3035WTPbF VS-MBR3035WT-N3 VS-MBR3045WTPbF VS-MBR3045WT-N3 UNITS

Maximum DC reverse

voltage

V_R

Maximumworkingpeak

reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_C= 125 °C, rated V_R

VALUES

UNITS

per leg

Maximum average

forward current

I_F(AV)

per device

Peak repetitive forward current per leg

I_FRM

Rated V_R, square wave, 20 kHz T_C= 125 °C

Following any rated load

condition and with rated

_RRMapplied

5 µs sine or 3 µs rect. pulse

1020

Non-repetitive peak surge current

I_FSM

Surge applied at rated load conditions half wave,

single phase, 60 Hz

200

2.0

Peak repetitive reverse surge current

I_RRM

2.0 µs 1.0 kHz

Revision: 30-Aug-11

Document Number: 94293

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与MBR3035WTPBF_12相关器件

型号	品牌	获取价格	描述	数据表
MBR3035WT-S	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, Silicon, TO-247AD, PLASTIC PACKAGE-3
MBR3040	GXELECTRONICS	获取价格	30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR3040	MCC	获取价格	30 Amp Rectifier 20 to 100 Volts Schottky Barrier
MBR3040	ASEMI	获取价格	Dual High-Voltage Schottky Rectifiers
MBR3040	PFS	获取价格	Schottky Barrier Rectifier
MBR3040	NJSEMI	获取价格	Diode Schottky 40V 30A 3-Pin(2+Tab) TO-3
MBR3040BCT	LGE	获取价格	30A Surface Mount High Power Schottky Barrier Rectifiers
MBR3040CGD	LGE	获取价格	30 AMPERES SCHOTTKY BARRIER RECTIFIERS
MBR3040CT	KERSEMI	获取价格	30 Amp Schottky Barrier Rectifier 30 to 60 Volts
MBR3040CT	LUNSURE	获取价格	SCHOTTKY BARRIER RECTIFIER

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