Datasheet > MBR3035PT_1

MBR3035PT_1

更新时间： 2024-11-20 04:41:07

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
2页	217K
描述
30.0 AMPS. Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册

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MBR3035PT_1 数据手册

MBR3035PT - MBR30150PT

30.0 AMPS. Schottky Barrier Rectifiers

TO-3P/TO-247AD

Features

ꢀ

Plastic material used carries Underwriters

Laboratory Classifications 94V-0

ꢀ

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

ꢀ

High temperature soldering guaranteed:

260 C/10 seconds,0.17”(4.3mm)from case

Mechanical Data

ꢀ

Cases: JEDEC TO-3P/TO-247AD molded plastic

body

Dimensions in inches and (millimeters)

ꢀ

Terminals: Pure tin plated, lead free. solderable per

MIL-STD-750, Method 2026

Polarity: As marked

ꢀ

Mounting position: Any

Mounting torque: 10 in. - lbs. max

Weight: 0.2 ounce, 5.6 grams

Maximum Ratings and Electrical Characteristics

Rating at C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBR MBR MBR MBR MBR MBR MBR

Symbol

Type Number

Units

3035 3045 3050 3060 3090 30100 30150

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100 150

70 105

100 150

V_RRM

V_RMS

V_DC

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

(SEE F1G. 1)

I_(AV)

I_FRM

I_FSM

I_RRM

Peak Repetitive Forward Current (Rated V , Square Wave,

20KHz) at Tc=105 C

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method )

200

Peak Repetitive Reverse Surge Current (Note 2)

2.0

1.0

Maximum Instantaneous Forward Voltage at (Note 1)

I =15A, Tc=25 C

0.75

0.65

－

0.85

－

0.95

0.92

1.02

0.98

I =15A, Tc=125 C

0.75

－

0.60

0.82

0.72

V_F

I =30A, Tc=25 C

I =30A, Tc=125 C

－

1.0

0.5

Maximum Instantaneous Reverse Current

@ Tc=25 C

I_R

at Rated DC Blocking Voltage Per Leg(Note 2) @ Tc=125

Voltage Rate of Change at (Rated V )

10,000

1,000

V/uS

dV/dt

Maximum Thermal Resistance Per Leg(Note 3)

1.4

C/W

θJC

Operating Junction Temperature Range

Storage Temperature Range

-65 to +150

-65 to +175

T_J

TSTG

Notes:

1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Thermal Resistance from Junction to case Per Leg

Version: A06

中文翻译

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与MBR3035PT_1相关器件

型号	品牌	获取价格	描述	数据表
MBR3035PT_11	TSC	获取价格	30.0AMPS. Schottky Barrier Rectifiers
MBR3035PT_14	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR3035PT_15	VISHAY	获取价格	Dual Common Cathode Schottky Rectifier
MBR3035PT-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247, PLASTIC P
MBR3035PT-C	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247AD, PLASTIC
MBR3035PT-E3	VISHAY	获取价格	DIODE 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, PLASTIC, TO-3P, 3 PIN, Rectifier Dio
MBR3035PT-E3/45	VISHAY	获取价格	DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PI
MBR3035PTP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247, PLASTIC P
MBR3035PTR	THINKISEMI	获取价格	30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers
MBR3035S-E3/4W	VISHAY	获取价格	DIODE 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

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