MBR3035CT~MBR30200CT
肖特基二极管SCHOTTKY Diodes
■特征 Features
● 耐正向浪涌电流能力高
■外形尺寸和印记 Outline Dimensions and Mark
T O- 220AB
High surge forward current capability
● 低功耗,大电流
Low Power loss, High efficiency
.200(5.10)
.159(4.04)
.17(4.31)
.131(3.34)
.429(10.9)
MAX
.055(1.40)
.045(1.14)
DIA
.129(3.27)
.087(2.22)
●
Io
30.0A
.61(15.5)
.571(14.5)
● VRRM
35-200V
PIN1
2
3
.126(3.19)
.084(2.14)
.176(4.46)
.124(3.16)
.576(14.62)
.514(13.06)
.037(0.94)
.027(0.68)
■用途 Applications
●快速整流用
.025(0.64)
.011(0.28)
.121(3.07)
.079(2.01)
.121(3.07)
.079(2.01)
High speed switching
PIN1
PIN2
CASE
PIN3
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
测试条件
MBR30-CT
参数名称
符号 单位
Test Conditions
Item
Symbol Unit
35
35
40
40
45
45
50
60
80
90 100 150 200
反向重复峰值电压
Repetitive Peak Reverse Voltage
VRRM
Io
V
A
A
50
60
80
90 100 150 200
60HZ 正弦波,电阻负载,Ta=25℃
60HZ sine wave, R- load, Ta=25℃
平均整流输出电流
Average Rectified Output Current
30
60HZ正弦波,一个周期,Ta=25℃
60HZ sine wave, 1 cycle, Ta=25℃
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward Current
IFSM
200
正向浪涌电流的平方对电流浪涌持
续
1ms≤t<8.3ms T =25℃,单个二
j
I2t
A2s
极管
167
时间的积分值
Current Squared Time
1ms≤t<8.3ms T =25℃,Rating
j
of per diode
贮存温度
Storage Temperature
℃
℃
Tstg
Tj
-55 ~ +150
在正向直流条件下,没有施加反向压
降,通电≤1h(图示1)①
IN DC Forward Mode-Forward
Operations,without reverse bias, t
≤1 h (Fig. 1)①
结温
-55 ~ +150
Junction Temperature
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
MBR30-CT
参数名称
Item
符号
单位
测试条件
Symbol Unit Test Condition
35
40
45
50
60
80
90
100 150 200
正向峰值电压
Peak Forward Voltage
VFM
V
I FM =15A
T =25℃
0.7
20
0.8
0.85
0.90 0.95
IRRM1
IRRM2
0.2
反向峰值电流
Peak Reverse Current
a
mA
VRM =VRRM
15
10
T =100℃
a
热阻
结和壳之间
Between junction and case
℃/W
2.0
R
θJ-C
Thermal Resistance
备注:Notes:
1) 热电阻从结到本体,每管脚到散热片的尺寸为
2"×3"×0.25 的铝板
Thermal resistance from junction to case per leg with heat-sink size of 2"×3"×0.25" AL-plate
扬州扬杰电子科技股份有限公司
www.21yangjie.com
S-B181
Rev. 1.0, 12-Mar-15
Yangzhou Yangjie Electronic Technology Co., Ltd.