MBR2040CT/TF THRU MBR20200CT/TF
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 40 to 200 V
Forward Current - 20 A
FEATURES
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
A1
A1
K
A2
K
A2
• High temperature soldering guaranteed
TO-220F
TO-220
• Mounting position: any
Mechanical data
A1
A2
• Case: TO-220
K
• Approx. Weight: 1.9g ( 0.067oz)
• Case: TO-220F
• Approx. Weight: 2.1g ( 0.07oz)
• Terminals: Lead solderable per MIL-STD-202, Method 208
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified
MBR2040CT
MBR2045CT
MBR2060CT MBR20100C T MBR20150CT MBR20200CT
TO-220
TO-220F MBR2040CTF
CHARACTERISTICS
Units
MBR2045CTF MBR2060CTF MBR20100CTF MBR20150CTF MBR20200CTF
Maximum Recurrent Peak Reverse Voltage
Maximum RMS voltage
VRRM
VRMS
VDC
40
28
40
45
31.5
45
60
42
60
100
70
150
105
150
200
140
200
V
V
V
A
Maximum DC Blocking Voltage
100
per diode
per device
10
20
Maximum Average Forward
Rectified Current
IF(AV)
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method) per diode
IFSM
150
A
Max Instantaneous
VF
IR
0.70
600
0.75
0.85
0.90
0.92
V
Forward Voltage at 10 A(per diode)
Ta = 25°C
Maximum DC Reverse Current
at Rated DC Reverse Voltage
0.1
20
0.05
20
mA
pF
Ta =125°C
Typical Junction Capacitance(1)
Typical Thermal Resistance(2)
400
Cj
°C/W
°C
RθJA
Tj
45
Operating Junction Temperature Range
Storage Temperature Range
-55 ~ +150
-55 ~ +150
-55 ~ +175
-55 ~ +175
Tstg
°C
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 10cmX10cmX1mm copper pad areas.
REV.08
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