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MBR20200CTR PDF预览

MBR20200CTR

更新时间： 2024-12-01 01:10:39
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 835K
描述
20 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

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MBR20200CTR 数据手册

 浏览型号MBR20200CTR的Datasheet PDF文件第2页 
MBR2045CTR thru MBR20200CTR  
®
MBR2045CTR/MBR2060CTR/MBR20100CTR/MBR20200CTR  
Pb Free Plating Product  
20 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
ꢀ Standard MBR matured technology with high reliablity  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
ꢀ Low forward voltage drop  
ꢀ High current capability  
ꢀ Low reverse leakage current  
ꢀ High surge current capability  
Application  
Automotive Inverters/Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
ꢀ Case: Heatsink TO-220AB  
.1(2.54)  
.1(2.54)  
ꢀ Epoxy: UL 94V-0 rate flame retardant  
ꢀ
method 208  
Terminals: Solderable per MIL-STD-202  
ꢀ Polarity: As marked on diode body  
ꢀ Mounting position: Any  
ꢀ Weight: 2.0 gram approximately  
Case  
Case  
Case  
Case  
Doubler  
Series  
Negative  
Positive  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Suffix "CT"  
Suffix "CTR"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)  
MBR2045CTR MBR2060CTR MBR20100CTR MBR20200CTR  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
45  
31  
45  
60  
42  
60  
100  
70  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
20  
20  
Peak repetitive forward current  
(Rated VR, Square Wave, 20KHz)  
IFRM  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
150  
A
A
Peak repetitive reverse surge current (Note 1)  
1
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF=10A, TJ=25℃  
-
0.80  
0.70  
0.95  
0.85  
0.85  
0.75  
0.95  
0.85  
0.99  
0.87  
1.23  
1.10  
IF=10A, TJ=125℃  
VF  
0.57  
0.84  
0.72  
V
IF=20A, TJ=25℃  
IF=20A, TJ=125℃  
0.1  
Maximum reverse current @ rated VR TJ=25 ℃  
TJ=125 ℃  
IR  
mA  
15  
10  
5
0.15  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
dV/dt  
RθJC  
TJ  
V/μs  
°C/W  
°C  
1.0  
2.0  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com/  
12

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