Datasheet > MBR20200F

MBR20200F

更新时间： 2024-09-25 07:08:11

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ASEMI MBR20200F

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MBR20200F 数据手册

MBR20200

Dual High-Voltage Schottky Rectifiers

REV:1.01

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM=200V

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

IF(AV)= 20A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

● Low Voltage Continued Circuit and Protection Circuit.

Polarity

■ MBR20200 Schottky diode,in the manufacture uses the main

process technology includes: Silicon epitaxial substrate, P+

loop technology,The potential metal and the silicon alloy

technology, the device uses the two chip, the common cathode,

the plastic package structure.

Absolute Maximum Ratings

Item

Maximal Inverted Repetitive Peak Voltage

maximal DC interdiction voltage

Symbol

VRRM

VDC

MBR20200

200

Unit

200

Average Rectified Forward Current TC=150℃

Device

Whole

IFAV

unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Electricity Character

Representat

ive

Test Condition

MBR20200

Unit

Item

Minimum

100

TJ =25℃

TJ =125℃

VF TJ =25℃

VR=VRRM

IF=10A

0.92

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