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MBR20200FCT-BP PDF预览

MBR20200FCT-BP

更新时间: 2024-11-18 21:14:43
品牌 Logo 应用领域
美微科 - MCC 局域网高电压电源高压二极管
页数 文件大小 规格书
3页 184K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 200V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN

MBR20200FCT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.02
应用:HIGH VOLTAGE POWER外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.8 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR20200FCT-BP 数据手册

 浏览型号MBR20200FCT-BP的Datasheet PDF文件第2页浏览型号MBR20200FCT-BP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MBR20200FCT  
Micro Commercial Components  
Features  
High Junction Temperature Capability  
Low Forward Voltage  
20 Amp High Voltage  
Power Schottky  
Barrier Rectifier  
200 Volts  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisture Sensitivity Level 1  
x
Marking : type number  
Halogen free available upon request by adding suffix "-HF"  
Maximum Ratings  
ITO-220AB  
Operating Junction Temperature: -50°C to +150°C  
Storage Temperature: -50°C to +150°C  
B
L
M
C
MCC  
Catalog  
Number  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum Maximum  
D
RMS  
DC  
A
Voltage  
Blocking  
Voltage  
200V  
K
PIN  
2
MBR20200FCT  
200V  
140V  
1
3
E
J
F
G
O
I
N
H
H
PIN 1  
PIN 3  
PIN 2  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
20 A  
TC = 115°C  
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
IFSM  
150A  
8.3ms, half sine  
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ꢀ ꢀ ꢀ ꢀ  
INCHES  
ꢃꢂꢄ  
MM  
ꢁꢂꢃ  
A
B
C
D
E
ꢃꢅꢆ  
ꢃꢂꢄ  
14.80  
---  
ꢃꢅꢆ  
15.40  
10.30  
2.85  
ꢄꢇꢈꢉ  
VF  
.95V  
.80V  
IF = 10A;  
TJ = 25°C  
IF = 10A;  
TJ = 125°C  
.583  
---  
.100  
.248  
---  
---  
.606  
.406  
.112  
2.55  
.272  
.161  
6.30  
---  
6.90  
4.10  
1.80  
F
G
.071  
.543  
---  
13.00  
.512  
13.80  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
H
I
J
K
L
M
N
O
.100  
2.55  
---  
---  
.118  
---  
---  
.098  
---  
.035  
.032  
.134  
.189  
.130  
.114  
.055  
---  
---  
3.00  
---  
---  
2.50  
---  
0.90  
0.80  
3.40  
4.80  
3.30  
2.90  
1.40  
IR  
50uA  
TJ = 25°C  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: A  
2013/01/01  
1 of 3  

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