Datasheet > MBR20200CT-J

MBR20200CT-J

更新时间： 2024-12-01 00:58:59

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
2页	1526K
描述
20A High Power Schottky Barrier Rectifiers

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MBR20200CT-J 数据手册

MBR2040CT-J THRU MBR20200CT-J

20A High Power Schottky Barrier Rectifiers

■ Features

■ Outline

• Low power loss, high efficiency.

TO-220AB

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

•Ultra high-speed switching.

0.420(10.66)

0.386(9.80)

0.197(5.0)MAX

0.055(1.40)

0.043(1.10)

•Silicon epitaxial planar chip, metal silicon junction. Suffix "H"

indicates Halogen-free part, ex.MBR2040CTH-J. Lead-free

parts meet environmental standards of

MIL-STD-19500 /228

0.226(5.75)MIN

0.624(15.87)MAX

0.155(3.94)

MAX

Marking code

0.115(2.92)

0.081(2.05)

0.054(1.37)

MAX

0.038(0.96)

0.020(0.50)

0.500(12.70)MIN

■ Mechanical data

0.250(6.35)

MIN

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220AB molded plastic body over

passivated chip.

0.110(2.80)

0.091(2.30)

0.028(0.70)

0.011(0.28)

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

PIN 1

PIN 3

PIN 2

• Polarity: Color band denotes cathode end.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 2.25 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

150

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

@10A, T_A= 25^OC @10A, T_A= 125^OC

V_F(V)

MBR2040CT

MBR2045CT

MBR2060CT

MBR2065CT

MBR20100CT

MBR20150CT

MBR20200CT

31.5

MBR2040CT-J

MBR2045CT-J

MBR2060CT-J

MBR2065CT-J

MBR20100CT-J

MBR20150CT-J

MBR20200CT-J

0.70

0.57

-55 ~ +150

-55 ~ +175

0.79

0.70

45.5

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

中文翻译

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与MBR20200CT-J相关器件

型号	品牌	获取价格	描述	数据表
MBR20200CTP	ONSEMI	获取价格	10A, 200V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, CASE 221A-09, 4 PIN
MBR20200CTR	THINKISEMI	获取价格	20 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers
MBR20200CTS	MCC	获取价格
MBR20200CTS	YANGJIE	获取价格	TO-220AB
MBR20200CTTU	ONSEMI	获取价格	Schottky Barrier Rectifier, 200 V, 20 A, 1000-TUBE
MBR20200CT-Y	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR20200D	SECOS	获取价格	20Amp Schottky Barrier Rectifiers
MBR20200D1	SECOS	获取价格	20.0 Amp Schottky Barrier Rectifiers
MBR20200D1-C	SECOS	获取价格	20.0 Amp Schottky Barrier Rectifiers
MBR20200DC	PANJIT	获取价格	20 AMPERES SCHOTTKY BARRIER RECTIFIERS

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