Datasheet > MBR20100PT

MBR20100PT

更新时间： 2024-10-15 02:54:55

品牌	Logo	应用领域
DSK		局域网功效瞄准线二极管
页数	文件大小	规格书
2页	244K
描述
DUAL SCHOTTKY RECTIFIERS

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MBR20100PT 数据手册

Diode Semiconductor Korea

MBR2070PT---MBR20100PT

VOLTAGE RANGE: 70 - 100 V

CURRENT: 20 A

DUAL SCHOTTKY RECTIFIERS

FEATURES

TO-3P(TO-247AD)

High surge capacity.

15.8± 0.2

5.0± 0.15

2.0± 0.15

For use in low voltage, high frequency

nverters, free

111 wheeling, and polarit

rotection applications.

Metal silicon junction, majoritycarrier conduction.

8.0± 0.2

φ3.6± 0.15

High current capacity, low forward voltage drop.

Guard ring for over voltage protection.

2.4± 0.2

MECHANICAL DATA

2.2± 0.15

1.2± 0.15

3.0± 0.1

Case:JEDEC TO-3P(TO-247AD),molded plastic body

Terminals:Leads, solderable per

IL-STD-750,

11 Method 2026

0.6± 0.1

5.4± 0.15

Polarity: As marked

Weight: 0.223 ounce, 6.3 grams

Position: Any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

MBR2070PT MBR2080PT MBR2090PT MBR20100PT

UNITS

Maximumrecurrent peak reverse voltage

Maximumw orking peak reverse voltage

MaximumDC blocking voltage

100

V_RRM

V_RWM

V_DC

100

Maximumaverage forw ard total device1

20.0

I_F(AV)

111rectified current

@T_C= 133

Peak forw ard surge current 8.3 ms single half

b sine-w ave superimposed on rated load

150.0

I_FSM

Maximumforward

voltage per leg

(NOTE1)

(I =10A,T_C=25 )

0.85

0.70

0.95

0.85

0.1

(I_F=10A,T_C=125 )

(I_F=20A,T_C=25 )

(I_F=20A,T_C=125 )

@T_A=25

V_F

Maximumreverse current

I_R

at rated DC blocking voltage

@T_A=125

6.0

Maximum junction capacitance (NOTE2)

Operating junction temperature range

Storage temperature range

NOTE: 1. Pulse test:300μs pulse width,1% duty cycle.

2. V_R=5V_DC,(test signal range 100KHz to 1MHz

400

C_T

- 55 ---- + 150

- 55 ---- + 175

T_STG

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