Datasheet > MBR20100V

MBR20100V

更新时间： 2024-11-07 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1651K
描述
Schottky Diodes

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中文翻译

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数据手册

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MBR20100V 数据手册

DIP Type

Diodes

Schottky Diodes

MBR20100V

TO-22O

TO-22OHF

■ Features

● Common cathode structure

● Low power loss, high efficiency

● High Operating Junction Temperature

● Guard ring for overvoltage protection，High reliability

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Reverse Voltage

Symbol

Rating

100

Unit

DC blocking voltage

100

Average Forward Current (Tc=125℃ TO-220)

(Tc=125℃ TO-220HF)

FAV

Peak Forward Surge Current

Thermal Resistance Junction to Case TO-220

TO-220HF

FSM

200

1.9

θJC

℃/W

2.5

Junction Temperature

175

℃

Storage Temperature range

stg

-40 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

0.65 0.68

0.54 0.58

0.73 0.78

= 10 A

=25℃

= 10 A

= 15 A

=125℃

=25℃

Forward voltage

0.6

0.65

=125℃

= VRRM

=25℃

Reverse voltage leakage current

=125℃

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