Datasheet > MBR20100U

MBR20100U

更新时间： 2024-09-17 18:09:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	2080K
描述
Schottky Diodes

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中文翻译

获取价格

数据手册

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MBR20100U 数据手册

DIP Type

Diodes

Schottky Diodes

MBR20100U

TO-22OHF

TO-22O

■ Features

● Common cathode structure

● Low power loss, high efficiency

● High Operating Junction Temperature

TO-22OB

● Guard ring for overvoltage protection，High reliability

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Reverse Voltage

100

DC blocking voltage

Average Forward Current (Tc=150℃ TO-220)

(Tc=125℃ TO 2-20HF)

FAV

Peak Forward Surge Current

Thermal Resistance Junction to Case TO-220

TO-220B

FSM

200

1.9

θJC

1.9

℃/W

TO-220HF

2.5

Junction Temperature

175

℃

Storage Temperature range

stg

-40 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

0.69 0.73

0.57 0.62

= 10 A

= 15 A

=25℃

=125℃

=25℃

Forward voltage

0.75

0.62

0.8

0.7

=125℃

= VRRM

=25℃

Reverse voltage leakage current

=125℃

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