Datasheet > MBR20100RG

MBR20100RG

更新时间： 2024-11-06 02:49:27

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
3页	1431K
描述
Low power loss,high efficiency High surge capacity

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数据手册

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MBR20100RG 数据手册

MBR2040RG-MBR20200RG

TO-263

Features:

□ Low power loss,high efficiency.

High surge capacity

□ For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications.

□ Metal silicon junction,majority carrier conduction.

□ High current Capability,low forward voltage drop.

□ Guard ring for over voltage protection.

1.Anode 2.Cathode 3. Anode

Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)

MBR

2040

MBR

2045

MBR

2050

MBR

2060

MBR

2080

MBR

2090

MBR

20100

MBR

20150

MBR

20200

PARAMETER

Symbol

Unit

Maximum Recurrent Peak

Reverse Voltage

V_RRM

100

150

200

Maximum RMS Voltage

V_RMS

V_R(DC)

I_F(AV)

31.5

105

150

140

200

Maximum DC Blocking Voltage

100

Maximum Average Forward

Current

Peak Forward Surge

Current:8.3ms single half

sine-wave superimposed on

rated load (JEDEC method)

I_FSM

200

Maximum Forward Voltage

V_F

0.65

0.72

0.85

0.95

at 10A per leg

Maximum DC

Reverse Current

at Rated DC

Tj=25℃

0.1

I_R

Tj=125℃

Blocking Voltage

Maximum Operating Junction

Temperature

T_j

150

℃

175

Storage Temperature

T_stg

-55~+ 150

-65~+175

Typical Thermal Resistance

R _θJC

1.4

℃/W

1/3

Rev :01.06.2018

www.leiditech.com

12 3

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