RoHS
MBR1080CT THRU MBR10200CT
Schottky Diodes
COMPLIANT
Features
● High frequency operation
● Low forward voltage drop
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
ackage: TO-220AB
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
(T =25℃Unless otherwise specified)
■
Maximum Ratings
a
MBR1080CT MBR10100CT MBR10120CT MBR10150CT MBR10200CT
PARAMETER
SYMBOL UNIT
MBR1080CT MBR10100CT MBR10120CT MBR10150CT MBR10200CT
Device marking code
V
Repetitive Peak Reverse Voltage
Average Rectified Output Current
V
A
80
100
120
150
200
RRM
I
O
10
100
41
@60Hz sine wave, R-load, T =25℃
a
Surge(Non-repetitive)Forward Current
@60Hz half sine-wave, 1 cycle, T =25℃
I
A
FSM
I2t
a
Current Squared Time
@1ms≤t≤8.3ms Tj=25℃
A2s
Storage Temperature
Junction Temperature
T
stg
℃
℃
-55 ~ +150
-55 ~ +150
T
j
(T =25℃Unless otherwise specified)
■Electrical Characteristics
a
TEST
CONDITIONS
MBR1080CT MBR10100CT MBR10120CT MBR10150CT MBR10200CT
PARAMETER
SYMBOL
UNIT
Maximum instantaneous
forward voltage drop per diode
V
V
FM
I
=5.0A
FM
0.85
0.9
0.95
V
=V
RM RRM
I
0.1
20
RRM1
Maximum DC reverse current
at rated DC blocking voltage
per diode
T =25℃
a
V
T =100℃
a
mA
=V
RM RRM
I
RRM2
Note1:Pulse test:300uS pulse widh,1% duty cycle
Note2:Pulse test:pulse widh 40mS
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B125
Rev.2.2, 02-Aug-23
www.21yangjie.com