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MBR10100CTR PDF预览

MBR10100CTR

更新时间: 2024-11-19 01:11:03
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 848K
描述
10 Ampere Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

MBR10100CTR 数据手册

 浏览型号MBR10100CTR的Datasheet PDF文件第2页 
MBR10100CTR thru MBR10200CTR  
®
MBR10100CTR/MBR10150CTR/MBR10200CTR  
Pb Free Plating Product  
10 Ampere Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
HMBR matured technology with high reliablity  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters/Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB  
.1(2.54)  
.1(2.54)  
Epoxy: UL 94V-0 rate flame retardant  
method 208  
Terminals: Solderable per MIL-STD-202  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.0 gram approximately  
Case  
Case  
Case  
Case  
Doubler  
Series  
Negative  
Positive  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Suffix "CT"  
Suffix "CTR"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
PARAMETER  
SYMBOL  
UNIT  
MBR10100CTR MBR10150CTR MBR10200CTR  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
70  
150  
105  
150  
10  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
Peak repetitive forward current  
(Rated VR, Square Wave, 20KHz)  
IFRM  
10  
A
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
IRRM  
120  
A
A
Peak repetitive reverse surge current (Note 1)  
1.0  
0.5  
Maximum instantaneous forward voltage (Note 2)  
IF= 5A, TJ=25  
0.85  
0.75  
0.95  
0.85  
0.88  
0.75  
0.97  
0.85  
IF= 5A, TJ=125℃  
VF  
V
IF=10A, TJ=25℃  
IF=10A, TJ=125℃  
Maximum reverse current @ rated VR  
TJ=25  
IR  
5
1
μA  
mA  
TJ=125 ℃  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
1.5  
dV/dt  
RθJC  
TJ  
V/μs  
o
C/W  
o
C
o
C
Operating junction temperature range  
Storage temperature range  
- 55 to +175  
- 55 to +175  
TSTG  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Rev.07C  
© 2006 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com/  

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