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MBR10100FCT PDF预览

MBR10100FCT

更新时间: 2024-11-18 19:54:59
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
3页 728K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, PLASTIC, TO-220F, 3 PIN

MBR10100FCT 技术参数

生命周期:Contact Manufacturer包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.12
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:120 A
元件数量:2相数:1
端子数量:3最高工作温度:125 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
最大功率耗散:2 W最大重复峰值反向电压:100 V
最大反向电流:100 µA表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

MBR10100FCT 数据手册

 浏览型号MBR10100FCT的Datasheet PDF文件第2页浏览型号MBR10100FCT的Datasheet PDF文件第3页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-220F Plastic-Encapsulate Diodes  
MBR1060, 70, 80, 90, 100FCT  
SCHOTTKY BARRIER RECTIFIER  
TO-220F  
1. ANODE  
2. CATHODE  
3. ANODE  
FEATURES  
Schottky Barrier Chip  
Guard Ring Die Construction for Transient Protection  
Low Power Loss,High Efficiency  
High Surge Capability  
High Current Capability and Low Forward Voltage Drop  
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,  
and Polarity Protection Applications  
MAXIMUM RATINGS ( Ta=25unless otherwise noted )  
Value  
Symbol  
Parameter  
Unit  
MBR10  
60FCT  
MBR10  
70FCT  
MBR10  
80FCT  
MBR10  
90FCT  
MBR10  
100FCT  
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
60  
42  
70  
49  
80  
90  
63  
100  
70  
V
RMS reverse voltage  
56  
10  
V
A
VR(RMS)  
IO  
Average rectified output current  
Non-Repetitive peak forward surge current  
8.3ms half sine wave  
120  
A
IFSM  
Power dissipation  
2
50  
W
/W  
PD  
RΘJA  
Tj  
Thermal resistance from junction to ambient  
Junction temperature  
125  
Storage temperature  
-55~+150  
Tstg  
C,Jan,2014  

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