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MBR10100CT-E3/4W PDF预览

MBR10100CT-E3/4W

更新时间: 2024-11-18 22:59:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 123K
描述
DIODE ARRAY SCHOTTKY 100V TO220

MBR10100CT-E3/4W 数据手册

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MBR1090CT-E3, MBR10100CT-E3  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode High Voltage Schottky Rectifier  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
• Lower power losses, high efficiency  
TO-220AB  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Solder bath temperature 275 °C maximum, 10 s,  
per JESD 22-B106  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
2
1
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters or polarity  
protection application  
PIN 1  
PIN 3  
PIN 2  
CASE  
MECHANICAL DATA  
Case: TO-220AB  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 5.0 A  
90 V, 100 V  
120 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VRRM  
IFSM  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
VF  
0.75 V  
E3 suffix meets JESD 201 class 1A whisker test  
TJ max.  
Package  
150 °C  
Polarity: As marked  
TO-220AB  
Diode variation  
Dual common cathode  
Mounting Torque: 10 in-lbs max.  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR1090CT MBR10100CT  
UNIT  
Max. repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
Max. DC blocking voltage  
total device  
per diode  
10  
Max. average forward rectified current at TC = 105 °C  
IF(AV)  
A
A
5.0  
Peak forward surge current 8.3 ms single half sine-wave superimposed  
IFSM  
EAS  
IRRM  
120  
on rated load per diode  
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode  
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C per diode  
Voltage rate of change (rated VR)  
60  
0.5  
mJ  
A
dV/dt  
TJ, TSTG  
10 000  
-65 to +150  
V/μs  
°C  
Operating junction and storage temperature range  
Revision: 10-May-16  
Document Number: 89125  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

MBR10100CT-E3/4W 替代型号

型号 品牌 替代类型 描述 数据表
MBR10100CT-E3/45 VISHAY

完全替代

Dual Common-Cathode High-Voltage Schottky Rectifier
MBR10100CT LITTELFUSE

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