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MBR10100CT-E3/45 PDF预览

MBR10100CT-E3/45

更新时间: 2024-02-12 00:28:40
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线高压功效局域网
页数 文件大小 规格书
4页 139K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

MBR10100CT-E3/45 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.04其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:120 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V最大反向电流:100 µA
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MBR10100CT-E3/45 数据手册

 浏览型号MBR10100CT-E3/45的Datasheet PDF文件第2页浏览型号MBR10100CT-E3/45的Datasheet PDF文件第3页浏览型号MBR10100CT-E3/45的Datasheet PDF文件第4页 
MBR1090CT & MBR10100CT  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
FEATURES  
• Guardring for overvoltage protection  
TO-220AB  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
2
1
• Solder dip 260 °C, 40 s  
PIN 1  
• Component in accordance to RoHS 2002/95/EC  
PIN 2  
CASE  
and WEEE 2002/96/EC  
PIN 3  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
VRRM  
IFSM  
5.0 A x 2  
90 V, 100 V  
120 A  
Case: TO-220AB  
Epoxy meets UL 94V-0 flammability rating  
VF  
0.75 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
MBR1090CT MBR10100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
total device  
Maximum average forward rectified current at TC = 105 °C  
per diode  
10  
5.0  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load per diode  
IFSM  
120  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
0.5  
A
10 000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
Document Number: 88666  
Revision: 07-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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