Datasheet > MBR10100CT-J

MBR10100CT-J

更新时间： 2024-10-01 01:25:59

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
3页	96K
描述
10A High Power Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBR10100CT-J 数据手册

MBR10100CT-J

10A High Power Schottky Barrier Rectifiers

■ Features

■ Outline

• Low power loss, high efficiency.

TO-220AB-J

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

0.406(10.31)

0.394(10.01)

0.200(5.08)

0.161(4.08)

• Silicon epitaxial planar chip, metal silicon junction.

• Suffix "G" indicates Halogen-free part, ex.MBR10100CTG-J.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

0.043(1.10)

0.020(0.50)

0.287(7.30)

0.169(4.30)

Marking code

0.039(1.0)

MAX

0.110(2.79)

0.070(1.79)

0.470(11.94)

0.313(7.94)

■ Mechanical data

Φ0.041(1.03)

Φ0.021(0.53)

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220AB-J molded plastic body over

passivated chip.

0.120(3.04)

0.080(2.04)

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

PIN 1

PIN 3

PIN 2

• Polarity: Color band denotes cathode end.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 2.25 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Symbol

MBR10100CT-J

Parameter

Marking code

UNIT

MBR10100CT

V_RRM

V_RMS

V_DC

100

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

0.81

0.71

Maximum DC Blocking Voltage

@5.0A, T_A= 25^OC

@5.0A, T_A= 125^OC

Maximum Forward Voltage

Operating Temperature

V_F

T_J

^OC

-50 ~ +150

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

125

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Document ID : DS-11K4N

Issued Date : 2010/05/05

Revised Date : 2012/05/31

Revision : C1

12 3

中文翻译

下载PDF

与MBR10100CT-J相关器件

型号	品牌	获取价格	描述	数据表
MBR10100CTP	DIODES	获取价格	10A SCHOTTKY BARRIER RECTIFIER
MBR10100CTP-G	DIODES	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, ITO-220
MBR10100CTR	THINKISEMI	获取价格	10 Ampere Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers
MBR10100CTS	YANGJIE	获取价格	TO-220AB
MBR10100CT-Y	TSC	获取价格	Dual Common Cathode Schottky Rectifier
MBR10100D	SIRECT	获取价格	Power Schottky Rectifier - 10Amp 100~200Volt
MBR10100D1	SECOS	获取价格	10.0 Amp Schottky Barrier Rectifiers
MBR10100D1-C	SECOS	获取价格	10.0 Amp Schottky Barrier Rectifiers
MBR10100DC	PANJIT	获取价格	D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
MBR10100DCT	NIUHANG	获取价格	SCHOTTKY RECTIFIERS