Datasheet > MBR10100CT-4W

MBR10100CT-4W

更新时间： 2024-11-19 01:13:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	691K
描述
High Voltage Trench MOS Barrier Schottky Rectifier

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MBR10100CT-4W 数据手册

MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3

www.vishay.com

Vishay General Semiconductor

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AC

ITO-220AC

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

MBR1090

MBR10100

PIN 1

MBRF1090

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AC and ITO-220AC package)

MBRF10100

PIN 1

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

CASE

PIN 2

TO-263AB

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters or polarity

protection application.

MBRB1090

MBRB10100

MECHANICAL DATA

PIN 1

Case: TO-220AC, ITO-220AC, TO-263AB

PIN 2

HEATSINK

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

10 A

90 V, 100 V

150 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

V_F

0.65 V

T_Jmax.

150 °C

Mounting Torque: 10 in-lbs maximum

TO-220AC, ITO-220AC,

TO-263AB



Package

Diode variations

Single die

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR1090

MBR10100

100

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

100

Maximum DC blocking voltage

100

Maximum average forward rectified current at T_C= 133 °C

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

150

130

0.5

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH

Peak repetitive reverse current at t_p= 2 μs, 1 kHz,

T_J= 38 °C 2 °C per diode

I_RRM

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-65 to +150

°C

Revision: 11-Sep-13

Document Number: 89034

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与MBR10100CT-4W相关器件

型号	品牌	获取价格	描述	数据表
MBR10100C-TA3-T	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER
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MBR10100CTD	DYELEC	获取价格	10 AMPERES SCHOTTKY BARRIER RECTIFIERS
MBR10100CT-E1	BCDSEMI	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100CT-E1	DIODES	获取价格	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10100CT-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
MBR10100CT-E3/45	VISHAY	获取价格	Dual Common-Cathode High-Voltage Schottky Rectifier
MBR10100CT-E3/4W	VISHAY	获取价格	DIODE ARRAY SCHOTTKY 100V TO220
MBR10100CT-E3W	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
MBR10100CTF	SHIKUES	获取价格	SCHOTTKY BARRIER RECTIFIERS

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