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MBR10100CT PDF预览

MBR10100CT

更新时间: 2024-11-18 11:56:55
品牌 Logo 应用领域
平盛电子 - PFS 二极管瞄准线功效
页数 文件大小 规格书
2页 639K
描述
10 Amp Schottky Barrier Rectifier 80-100 Volts

MBR10100CT 数据手册

 浏览型号MBR10100CT的Datasheet PDF文件第2页 
MBR1080CT  
MBR10100CT  
THRU  
Features  
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton  
Guard ring for transient protection  
Low power loss high efficiency  
10 Amp  
Schottky Barrier  
Rectifier  
High surge capacity, High current capability  
80-100 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +175°C  
TO-220AB  
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
80V  
Maximum Maximum  
B
L
RMS  
DC  
M
Voltage  
Blocking  
Voltage  
C
D
A
K
MBR1080CT MBR1080CT  
MBR10100CT MBR10100CT 100V  
56V  
70V  
80V  
100V  
E
F
PIN  
2
1
3
G
I
J
°
Electrical Characteristics @ 25 C Unless Otherwise Specified  
N
H
H
Average Forward  
Current  
IF(AV)  
10A  
TC = 100°C  
PIN 1  
PIN 3  
PIN 2  
CASE  
Peak Forward Surge  
Current  
IFSM  
120A  
8.3ms, half sine  
Maximum Forward  
Voltage Drop Per  
Element  
ꢁꢂꢃꢉꢄꢊꢂꢇꢄꢊ  
ꢀ ꢀ ꢀ ꢀ  
IFM = 5A  
INCHES  
MM  
VF  
.85V  
.75V  
25°C  
TJ =  
TJ =  
ꢁꢂꢃ  
A
B
ꢃꢂꢄ  
.560  
.380  
.100  
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
ꢄꢇꢈꢉ  
.625  
.420  
.135  
125°C  
C
2.54  
D
E
F
G
H
I
J
K
.230  
.380  
------  
.500  
.090  
.020  
.012  
.270  
.420  
.250  
.580  
.110  
.045  
.025  
5.84  
9.65  
------  
12.70  
2.29  
0.51  
0.30  
3.53  
6.86  
10.67  
6.35  
14.73  
2.79  
1.14  
0.64  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
0.2mA TJ = 25°C  
IR  
TJ = 125°C  
15mA  
.139  
.161  
4.09  
L
M
N
.140  
.045  
.080  
.190  
.055  
.115  
3.56  
1.14  
2.03  
4.83  
1.40  
2.92  
Typical Junction  
Capacitance  
CJ  
Measured at  
1.0MHz, VR=4.0V  
300pF  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
WWW.PS-PFS.COM  
Web Site:  

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