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MBM29LV160T-12PFTN-E1 PDF预览

MBM29LV160T-12PFTN-E1

更新时间: 2024-12-01 14:11:51
品牌 Logo 应用领域
飞索 - SPANSION 光电二极管内存集成电路
页数 文件大小 规格书
64页 503K
描述
Flash, 1MX16, 120ns, PDSO48, PLASTIC, TSOP1-48

MBM29LV160T-12PFTN-E1 技术参数

生命周期:Obsolete零件包装代码:TSOP1
包装说明:PLASTIC, TSOP1-48针数:48
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.22
最长访问时间:120 ns备用内存宽度:8
启动块:TOPJESD-30 代码:R-PDSO-G48
长度:18.4 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:48字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

MBM29LV160T-12PFTN-E1 数据手册

 浏览型号MBM29LV160T-12PFTN-E1的Datasheet PDF文件第2页浏览型号MBM29LV160T-12PFTN-E1的Datasheet PDF文件第3页浏览型号MBM29LV160T-12PFTN-E1的Datasheet PDF文件第4页浏览型号MBM29LV160T-12PFTN-E1的Datasheet PDF文件第5页浏览型号MBM29LV160T-12PFTN-E1的Datasheet PDF文件第6页浏览型号MBM29LV160T-12PFTN-E1的Datasheet PDF文件第7页 
MBM29LV160T-80/-90/-12/  
MBM29LV160B-80/-90/-12  
MBM29LV160T-80/-90/-12/MBM29LV160B  
-
80/-90/-12Cover Sheet  
Data Sheet (Retired Product)  
This product has been retired and is not recommended for new designs. Availability of this document is retained for reference  
and historical purposes only.  
Continuity of Specifications  
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been  
made are the result of normal data sheet improvement and are noted in the document revision summary.  
For More Information  
Please contact your local sales office for additional information about Spansion memory solutions.  
Publication Number MBM29LV160T/MBM29LV160B  
Revision DS05-20846-7E  
Issue Date July 26, 2007  

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