Datasheet > MBM29DL321BD-90

MBM29DL321BD-90

更新时间： 2024-11-29 22:09:27

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
84页	1501K
描述
32M (4M X 8/2M X 16) BIT Dual Operation

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数据手册

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MBM29DL321BD-90 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20873-4E

FLASH MEMORY

CMOS

32M (4M × 8/2M × 16) BIT Dual Operation

MBM29DL32XTD/BD-80/90/12

■ FEATURES

• 0.33 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to Table 1)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

(Continued)

■ PRODUCT LINE UP

Part No.

V^CC= 3.3 V

MBM29DL32XTD/MBM29DL32XBD

+0.3 V

–0.3 V

—

Ordering Part No.

+0.6 V

–0.3 V

V^CC= 3.0 V

—

120

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

■ PACKAGES

48-pin plastic TSOP (I)

57-ball plastic FBGA

Marking Side

(FPT-48P-M19)

(FPT-48P-M20)

(BGA-57P-M01)

Em\edded Erase^TMand Embedded Program^TMare trademarks of Advanced Micro Devices, Inc.

12 3 4 5 6 7...84

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MBM29DL321BD90PFTR	SPANSION	获取价格	Flash, 2MX16, 90ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
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