Datasheet > MBM29DL321BE

MBM29DL321BE

更新时间： 2024-11-29 22:36:07

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
80页	1459K
描述
32M (4M x 8/2M x 16) BIT Dual Operation

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数据手册

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MBM29DL321BE 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20881-3E

FLASH MEMORY

CMOS

32M (4M × 8/2M × 16) BIT Dual Operation

MBM29DL32XTE/BE ^-80/90/12

■ DESCRIPTION

The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M

words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

V^CCsupply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be

reprogrammed in standard EPROM programmers.

MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which can be considered to be two

separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s

standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access

from a non-busy bank of the array while an embedded write (either a program or an erase) operation is

simultaneously taking place on the other bank.

(Continued)

■ PRODUCT LINE UP

Part No.

V^CC= 3.3 V

MBM29DL32XTE/BE

+0.3 V

–0.3 V

—

Ordering Part No.

+0.6 V

–0.3 V

V^CC= 3.0 V

—

120

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

■ PACKAGES

48-pin plastic TSOP (I)

63-ball plastic FBGA

Marking Side

(BGA-63P-M01)

(FPT-48P-M19)

(FPT-48P-M20)

12 3 4 5 6 7...80

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