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MBM29DL321BE80PBT PDF预览

MBM29DL321BE80PBT

更新时间: 2024-11-29 22:09:27
品牌 Logo 应用领域
富士通 - FUJITSU 闪存存储内存集成电路
页数 文件大小 规格书
80页 1459K
描述
32M (4M x 8/2M x 16) BIT Dual Operation

MBM29DL321BE80PBT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, FBGA-63Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.85最长访问时间:80 ns
其他特性:100000 ERASE CYCLES备用内存宽度:8
启动块:BOTTOM命令用户界面:YES
通用闪存接口:YES数据轮询:YES
JESD-30 代码:R-PBGA-B63JESD-609代码:e0
长度:11 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8,63
端子数量:63字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:-20 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA63,8X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V编程电压:3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:8K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.053 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES类型:NOR TYPE
宽度:7 mmBase Number Matches:1

MBM29DL321BE80PBT 数据手册

 浏览型号MBM29DL321BE80PBT的Datasheet PDF文件第2页浏览型号MBM29DL321BE80PBT的Datasheet PDF文件第3页浏览型号MBM29DL321BE80PBT的Datasheet PDF文件第4页浏览型号MBM29DL321BE80PBT的Datasheet PDF文件第5页浏览型号MBM29DL321BE80PBT的Datasheet PDF文件第6页浏览型号MBM29DL321BE80PBT的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20881-3E  
FLASH MEMORY  
CMOS  
32M (4M × 8/2M × 16) BIT Dual Operation  
MBM29DL32XTE/BE -80/90/12  
DESCRIPTION  
The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M  
words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V  
VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be  
reprogrammed in standard EPROM programmers.  
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which can be considered to be two  
separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s  
standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access  
from a non-busy bank of the array while an embedded write (either a program or an erase) operation is  
simultaneously taking place on the other bank.  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 3.3 V  
MBM29DL32XTE/BE  
+0.3 V  
–0.3 V  
80  
Ordering Part No.  
+0.6 V  
–0.3 V  
VCC = 3.0 V  
80  
80  
30  
90  
90  
90  
35  
12  
120  
120  
50  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
63-ball plastic FBGA  
Marking Side  
Marking Side  
(BGA-63P-M01)  
(FPT-48P-M19)  
(FPT-48P-M20)  

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