5秒后页面跳转
MBM29DL321TD12PBT-E1 PDF预览

MBM29DL321TD12PBT-E1

更新时间: 2024-12-02 05:28:43
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路存储闪存
页数 文件大小 规格书
84页 1629K
描述
Flash, 2MX16, 120ns, PBGA57, PLASTIC, FBGA-57

MBM29DL321TD12PBT-E1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:PLASTIC, FBGA-57
针数:57Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.52最长访问时间:120 ns
备用内存宽度:8启动块:TOP
JESD-30 代码:R-PBGA-B57JESD-609代码:e1
长度:13.95 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1端子数量:57
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
类型:NOR TYPE宽度:7.95 mm
Base Number Matches:1

MBM29DL321TD12PBT-E1 数据手册

 浏览型号MBM29DL321TD12PBT-E1的Datasheet PDF文件第2页浏览型号MBM29DL321TD12PBT-E1的Datasheet PDF文件第3页浏览型号MBM29DL321TD12PBT-E1的Datasheet PDF文件第4页浏览型号MBM29DL321TD12PBT-E1的Datasheet PDF文件第5页浏览型号MBM29DL321TD12PBT-E1的Datasheet PDF文件第6页浏览型号MBM29DL321TD12PBT-E1的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20873-4E  
FLASH MEMORY  
CMOS  
32M (4M × 8/2M × 16) BIT Dual Operation  
MBM29DL32XTD/BD-80/90/12  
FEATURES  
• 0.33 µm Process Technology  
• Simultaneous Read/Write operations (dual bank)  
Multiple devices available with different bank sizes (Refer to Table 1)  
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank  
Zero latency between read and write operations  
Read-while-erase  
Read-while-program  
• Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 3.3 V  
MBM29DL32XTD/MBM29DL32XBD  
+0.3 V  
–0.3 V  
80  
Ordering Part No.  
+0.6 V  
–0.3 V  
VCC = 3.0 V  
80  
80  
30  
90  
90  
90  
35  
12  
120  
120  
50  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
57-ball plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(FPT-48P-M20)  
(BGA-57P-M01)  
Em\edded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.  

与MBM29DL321TD12PBT-E1相关器件

型号 品牌 获取价格 描述 数据表
MBM29DL321TD12PFTN SPANSION

获取价格

Flash, 2MX16, 120ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL321TD12PFTN FUJITSU

获取价格

2MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL321TD12PFTN-E1 SPANSION

获取价格

Flash, 2MX16, 120ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL321TD12PFTR SPANSION

获取价格

Flash, 2MX16, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL321TD-12PFTR FUJITSU

获取价格

Flash, 4MX8, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL321TD-80 FUJITSU

获取价格

32M (4M X 8/2M X 16) BIT Dual Operation
MBM29DL321TD80PBT SPANSION

获取价格

2MX16 FLASH 3V PROM, 80ns, PBGA57, PLASTIC, FBGA-57
MBM29DL321TD80PBT FUJITSU

获取价格

2MX16 FLASH 3V PROM, 80ns, PBGA57, PLASTIC, FBGA-57
MBM29DL321TD-80PBT FUJITSU

获取价格

32M (4M X 8/2M X 16) BIT Dual Operation
MBM29DL321TD80PBT-E1 SPANSION

获取价格

Flash, 2MX16, 80ns, PBGA57, PLASTIC, FBGA-57