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MBM29DL321BE-90TR PDF预览

MBM29DL321BE-90TR

更新时间: 2024-11-30 22:09:27
品牌 Logo 应用领域
富士通 - FUJITSU 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
80页 1459K
描述
32M (4M x 8/2M x 16) BIT Dual Operation

MBM29DL321BE-90TR 技术参数

生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSOP1-R,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.52
Is Samacsys:N最长访问时间:90 ns
备用内存宽度:8启动块:BOTTOM
JESD-30 代码:R-PDSO-G48长度:18.4 mm
内存密度:33554432 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1-R封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
类型:NOR TYPE宽度:12 mm
Base Number Matches:1

MBM29DL321BE-90TR 数据手册

 浏览型号MBM29DL321BE-90TR的Datasheet PDF文件第2页浏览型号MBM29DL321BE-90TR的Datasheet PDF文件第3页浏览型号MBM29DL321BE-90TR的Datasheet PDF文件第4页浏览型号MBM29DL321BE-90TR的Datasheet PDF文件第5页浏览型号MBM29DL321BE-90TR的Datasheet PDF文件第6页浏览型号MBM29DL321BE-90TR的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20881-3E  
FLASH MEMORY  
CMOS  
32M (4M × 8/2M × 16) BIT Dual Operation  
MBM29DL32XTE/BE -80/90/12  
DESCRIPTION  
The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M  
words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V  
VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be  
reprogrammed in standard EPROM programmers.  
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which can be considered to be two  
separate memory arrays as far as certain operations are concerned. These devices are the same as Fujitsu’s  
standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access  
from a non-busy bank of the array while an embedded write (either a program or an erase) operation is  
simultaneously taking place on the other bank.  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 3.3 V  
MBM29DL32XTE/BE  
+0.3 V  
–0.3 V  
80  
Ordering Part No.  
+0.6 V  
–0.3 V  
VCC = 3.0 V  
80  
80  
30  
90  
90  
90  
35  
12  
120  
120  
50  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
63-ball plastic FBGA  
Marking Side  
Marking Side  
(BGA-63P-M01)  
(FPT-48P-M19)  
(FPT-48P-M20)  

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32M (4M X 8/2M X 16) BIT Dual Operation
MBM29DL321TD-12 FUJITSU

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32M (4M X 8/2M X 16) BIT Dual Operation
MBM29DL321TD12PBT SPANSION

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Flash, 2MX16, 120ns, PBGA57, PLASTIC, FBGA-57
MBM29DL321TD-12PBT FUJITSU

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Flash, 4MX8, 120ns, PBGA57, PLASTIC, FBGA-57
MBM29DL321TD12PBT-E1 SPANSION

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Flash, 2MX16, 120ns, PBGA57, PLASTIC, FBGA-57
MBM29DL321TD12PFTN SPANSION

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Flash, 2MX16, 120ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL321TD12PFTN FUJITSU

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2MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL321TD12PFTN-E1 SPANSION

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Flash, 2MX16, 120ns, PDSO48, PLASTIC, TSOP1-48
MBM29DL321TD12PFTR SPANSION

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Flash, 2MX16, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48
MBM29DL321TD-12PFTR FUJITSU

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Flash, 4MX8, 120ns, PDSO48, PLASTIC, REVERSE, TSOP1-48