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MB81P643287 PDF预览

MB81P643287

更新时间: 2024-11-06 22:30:23
品牌 Logo 应用领域
富士通 - FUJITSU 动态存储器
页数 文件大小 规格书
65页 680K
描述
8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM

MB81P643287 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-11402-2E  
MEMORY  
CMOS  
8 x 256K x 32 BIT, FCRAMTM CORE  
BASED DOUBLE DATA RATE SDRAM  
MB81P643287-50/-60  
CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based  
Synchronous Dynamic Random Access Memory  
with Double Data Rate  
DESCRIPTION  
The Fujitsu MB81P643287 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) with Fujitsu  
advanced FCRAM (Fast Cycle Random Access Memory) Core Technology, containing 67,108,864 memory cells  
accessible in an 32-bit format. The MB81P643287 features a fully synchronous operation referenced to clock  
edge whereby all operations are synchronized at a clock input which enables high performance and simple user  
interface coexistence. The MB81P643287 is designed to reduce the complexity of using a standard dynamic RAM  
(DRAM) which requires many control signal timin.g constraints. The MB81P643287 uses Double Data Rate (DDR)  
where data bandwidth is twice of fast speed compared with regular SDRAMs.  
The MB81P643287 is ideally suited for Digital Visual Systems, High Performance Graphic Adapters, Hardware  
Accelerators, Buffers, and other applications where large memory density and high effective bandwidth are  
required and where a simple interface is needed.  
The MB81P643287 adopts new I/O interface circuitry, SSTL_2 interface, which is capable of extremely fast data  
transfer of quality under either terminated or point to point bus environment.  
PRODUCT LINE  
MB81P643287  
Parameter  
-50  
200 MHz Max.  
133 MHz Max.  
2.5 ns Min.  
-60  
167 MHz Max.  
111 MHz Max.  
3.0 ns Min.  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
Clock Frequency  
Burst Mode Cycle Time  
3.75 ns Min.  
4.5 ns Min.  
Random Address Cycle Time  
DQS Access Time From Clock  
Operating Current  
30 ns Min.  
36 ns Min.  
0.1 × tCK + 0.2 ns Max.  
460 mA Max.  
0.1 × tCK + 0.2 ns Max.  
405 mA Max.  
Power Down Current  
35 mA Max.  
Note: FCRAM is a trademark of Fujitsu Limited, Japan.  

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