Datasheet > MB81P643287-50

MB81P643287-50

更新时间： 2024-09-16 22:30:23

品牌	Logo	应用领域
富士通 - FUJITSU		动态存储器
页数	文件大小	规格书
65页	680K
描述
8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM

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MB81P643287-50 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-11402-2E

MEMORY

CMOS

8 x 256K x 32 BIT, FCRAM^TMCORE

BASED DOUBLE DATA RATE SDRAM

MB81P643287-50/-60

CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based

Synchronous Dynamic Random Access Memory

with Double Data Rate

■ DESCRIPTION

The Fujitsu MB81P643287 is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) with Fujitsu

advanced FCRAM (Fast Cycle Random Access Memory) Core Technology, containing 67,108,864 memory cells

accessible in an 32-bit format. The MB81P643287 features a fully synchronous operation referenced to clock

edge whereby all operations are synchronized at a clock input which enables high performance and simple user

interface coexistence. The MB81P643287 is designed to reduce the complexity of using a standard dynamic RAM

(DRAM) which requires many control signal timin.g constraints. The MB81P643287 uses Double Data Rate (DDR)

where data bandwidth is twice of fast speed compared with regular SDRAMs.

The MB81P643287 is ideally suited for Digital Visual Systems, High Performance Graphic Adapters, Hardware

Accelerators, Buffers, and other applications where large memory density and high effective bandwidth are

required and where a simple interface is needed.

The MB81P643287 adopts new I/O interface circuitry, SSTL_2 interface, which is capable of extremely fast data

transfer of quality under either terminated or point to point bus environment.

■ PRODUCT LINE

MB81P643287

Parameter

-50

200 MHz Max.

133 MHz Max.

2.5 ns Min.

-60

167 MHz Max.

111 MHz Max.

3.0 ns Min.

CL = 3

CL = 2

CL = 3

CL = 2

Clock Frequency

Burst Mode Cycle Time

3.75 ns Min.

4.5 ns Min.

Random Address Cycle Time

DQS Access Time From Clock

Operating Current

30 ns Min.

36 ns Min.

0.1 × t^CK+ 0.2 ns Max.

460 mA Max.

0.1 × tCK + 0.2 ns Max.

405 mA Max.

Power Down Current

35 mA Max.

Note: FCRAM is a trademark of Fujitsu Limited, Japan.

12 3 4 5 6 7...65

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与MB81P643287-50相关器件

型号	品牌	获取价格	描述	数据表
MB81P643287-50FN	FUJITSU	获取价格	DDR DRAM, 2MX32, 1.1ns, CMOS, PDSO86, PLASTIC, TSOP2-86
MB81P643287-60	FUJITSU	获取价格	8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM
MB81P643287-60FN	FUJITSU	获取价格	DDR DRAM, 2MX32, 1.3ns, CMOS, PDSO86, PLASTIC, TSOP2-86
MB81P64847A-12FN	FUJITSU	获取价格	DDR DRAM, 8MX8, 1ns, CMOS, PDSO66
MB81V16160A-60LPFTN	FUJITSU	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
MB81V16160A-60PJ	FUJITSU	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
MB81V16160B-50LPFTN	FUJITSU	获取价格	1MX16 FAST PAGE DRAM, 50ns, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
MB81V16160B-60PJ	FUJITSU	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
MB81V16165A-60LPFTN	FUJITSU	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
MB81V16165A-60PFTN	FUJITSU	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44

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