Datasheet > MAZL100H

MAZL100H

更新时间： 2024-11-06 22:06:03

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	58K
描述
Silicon planar type

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中文翻译

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数据手册

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MAZL100H 数据手册

ESD Diodes

MAZL000H Series

Silicon planar type

Unit: mm

+0.20

–0.05

2.90

+0.10

0.16

1.9±0.1

(0.95) (0.95)

–0.06

For surge absorption circuit

■ Features

•

Four elements anode-common type

_tot= 200 mW

•

+0.10

–0.05

0.30

10˚

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Total power dissipation ^*

Junction temperature

Storage temperature

Symbol

P_tot

Rating

200

Unit

°C

T_j

150

1: Cathode 1

2: Cathode 2

3: Cathode 3

4: Anode 1, 2

Anode 3, 4

5: Cathode 4

T_stg

−55 to +150

°C

Note) : With a printed circuit board

EIAJ: SC-74A

Mini5-G1 Package

Internal Connection

■ Common Electrical Characteristics T_a= 25°C ^*

Parameter

Symbol

V_Z

Conditions

Specified value

Min

Typ

Max

Unit

Zener voltage^*

I_Z

Refer to the list of the

electrical characteristics

within part numbers

Zener knee operating resistance

Zener operating resistance

Reverse current

R_ZK

R_Z

I_Z

Ω

I_Z

Ω

I_R

V_R

µA

Note) 1. Test method according to the JIS C7031 testing

2. Electrostatic breakdown voltage is ±10 kV

Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)

3. 1: The V_Zvalue is for the temperature of 25°C. In other cases, carry out the temperature compensation.

ꢀ

2: Guaranteed at 20 ms after power application.

Publication date: February 2002

SKE00011BED

12 3

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