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MAZP068H PDF预览

MAZP068H

更新时间: 2024-11-09 19:54:03
品牌 Logo 应用领域
松下 - PANASONIC 测试二极管
页数 文件大小 规格书
3页 437K
描述
Zener Diode, 6.8V V(Z), 5.88%, 0.2W, Silicon, Unidirectional, ROHS COMPLIANT, ML3-N2, 3 PIN

MAZP068H 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PBCC-N3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
外壳连接:ANODE配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PBCC-N3JESD-609代码:e6
湿度敏感等级:1元件数量:2
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:6.8 V表面贴装:YES
技术:ZENER端子面层:Tin/Bismuth (Sn/Bi)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5.88%
工作测试电流:5 mABase Number Matches:1

MAZP068H 数据手册

 浏览型号MAZP068H的Datasheet PDF文件第2页浏览型号MAZP068H的Datasheet PDF文件第3页 
This product complies with RoHS Directive (EU 2002/95/EC).  
Zener Diodes  
MAZPxxxH Series  
Silicon planar type  
For surge absorption circuits  
Unit: mm  
Features  
0.01 0.005  
Two elements are contained in one package, optimum for high-density  
3
2
1
mounting  
Absolute Maximum Ratings Ta = 25°C  
+0.01  
0.39  
0.03  
Parameter  
Total power dissipation *  
Junction temperature  
Storage temperature  
Symbol  
Rating  
200  
Unt  
mW  
°C  
0.25 0.05  
0.25  
0.051  
PT  
Tj  
150  
T
stg  
5 to
°C  
2
3
0.65 0.01  
0.05 0.03  
Note) : P = 200 mW achieved with a printed circuit board. (2otal)  
*
T
1: Cathode 1  
2: Cathode 2  
3: Anode 1, 2  
ML3-N2 Package  
Internal Connection  
1
3
2
Elcrical Ceristics Ta 25°C±3°C  
Parameter  
Zener volage *  
Symbol  
VZ  
Conditions  
Min  
Typ  
Max  
Unit  
V
IZ  
Specified value  
Spcified value  
Specified value  
Specified vaue  
Zeer rise operstanc
Zener oper
Reverse current  
RZK  
RZ  
IZ  
W
Refer to the list of the  
IZ  
electrical characteristics  
within part numbers  
W
IR  
VR  
mA  
Note) 1. Measuring mods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Electrostatic breakdown voltage: ±10 kV  
Test method: IEC1000-4-2 (C = 150 pF, R = 330 W, Contact discharge10 times)  
3. The temperature must be controlled 25°C for VZ mesurement.  
VZ value measured at other temperature must be adjusted to VZ (25°C)  
4. : V guaranted 20 ms after current flow.  
*
Z
Electrical Characteristics within Part Numbers Ta = 25°C±3°C  
Zener rise  
Zener  
operating  
resistance  
RZ (W)  
Reverse  
current  
IR ( mA)  
Zener voltage  
VZ (V)  
operating  
resistance  
Marking  
symbol  
Part number  
RZK (W)  
IZ  
IZ  
IZ  
VR  
Min  
Typ  
Max  
Max  
Max  
Max  
(mA)  
(mA)  
(mA)  
(V)  
4.0  
5.0  
MAZP068H  
MAZP082H  
5
5
6.40  
7.70  
6.80  
8.20  
7.20  
8.70  
0.5  
60  
60  
5
30  
30  
0.1  
0.1  
B6  
6
0.5  
5
Publication date: February 2007  
SKE00029AED  
1

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