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MAZL120HG PDF预览

MAZL120HG

更新时间: 2024-11-07 20:07:59
品牌 Logo 应用领域
松下 - PANASONIC 测试光电二极管
页数 文件大小 规格书
4页 194K
描述
Zener Diode, 12V V(Z), 5.39%, 0.2W, Silicon, Unidirectional, ROHS COMPLIANT, MINI5-G2, 5 PIN

MAZL120HG 技术参数

生命周期:Obsolete包装说明:R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.81配置:COMMON ANODE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G5元件数量:4
端子数量:5封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified标称参考电压:12 V
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
最大电压容差:5.39%工作测试电流:5 mA
Base Number Matches:1

MAZL120HG 数据手册

 浏览型号MAZL120HG的Datasheet PDF文件第2页浏览型号MAZL120HG的Datasheet PDF文件第3页浏览型号MAZL120HG的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Zener Diodes  
MAZLxxxHG Series  
Silicon planar type  
For surge absorption circuit  
Features  
Package  
Four elements anode-common type  
Code  
Total power dissipation PT : 200 mW  
Mini5-G2  
Pin Name  
1: C1  
2: C
atho
4: Anode  
5: Cathode 4  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Total power dissipation *  
Junction temperature  
Storage temperature  
Symbol  
PT  
Rating  
20
Unit  
mW  
°C  
Marking Symbol  
Tj  
1
Refer to the list of the electrical  
characteristics within part numbers  
Tstg  
55 o +150  
°C  
Note) : P = 200 mW achieved intecircuit board.  
*
T
Internal Connection  
3
4
5
2
1
Commolectrical Characteristics Ta = 25°C 3°C  
Zener volt
Symbol  
VZ  
Conditions  
Min  
Typ  
Max  
Unit  
V
IZ  
Specified value  
Specified value  
Specified value  
Specified value  
Refer to the list of the  
electrical characteristics  
within part numbers  
Zener rise operresistance  
Zener operating resistance  
Reverse current  
RZK  
RZ  
IZ  
IZ  
IR  
VR  
µA  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Electrostatic breakdown voltage: 10 kV  
Test method: IEC1000-4-2 (C = 150 pF, R = 330 , Contact disharge: 10 times)  
3. *: The temperature must be controlled 25°C for VZ mesurement.  
VZ value measured at other temperature must be adjusted to VZ (25°C)  
VZ guaranted 20 ms after current flow.  
Publication date: March 2009  
SKE00052AED  
1

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