MAZM100H

更新时间： 2024-01-27 12:32:31

品牌	Logo	应用领域
松下 - PANASONIC		ESD二极管
页数	文件大小	规格书
3页	84K
描述
ESD Diodes. Silicon planar type

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MAZM100H 数据手册

ESD Diodes

MAZMxxxH Series

Silicon planar type

Unit: mm

1.60 0.05

1.00 0.05

For surge absorption circuit

0.55 0.05

■ Features

•

Four elements anode-common type

Power dissipation P_D: 150 mW

0.10 0.03

0.20 0.05

5°

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Power dissipation ^*

Junction temperature

Storage temperature

Symbol

P_D

Rating

150

Unit

°C

T_j

150

1 : Cathode 1

2 : Anode 1, 2, 3, 4 5 : Cathode 4

3 : Cathode 2

4 : Cathode 3

T_stg

−55 to +150

°C

SSMini5-F1 Package

Note) : P_D= 150 mW achieved with a printed circuit board.

Internally connected circuit

■ Common Electrical Characteristics T_a= 25°C 3°C

Parameter

Zener voltage ^*

Symbol

V_Z

Conditions

Min

Typ

Max

Unit

I_Z

Specified value

Refer to the list of the

electrical characteristics

within part numbers

Zener rise operating resistance

Zener operating resistance

Reverse current

R_ZK

R_Z

I_Z

Ω

I_Z

Ω

I_R

V_R

µA

Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Electrostatic breakdown voltage is 10 kV

Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)

ꢀ

3. : The temperature must be controlled 25°C for V_Zmesurement.

V_Zvalue measured at other temperature must be adjusted to V_Z(25°C)

V_Zguaranted 20 ms after current flow.

Publication date: November 2004

SKE00021AED

12 3

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