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MAZM068HG PDF预览

MAZM068HG

更新时间: 2024-11-07 13:11:11
品牌 Logo 应用领域
松下 - PANASONIC 瞬态抑制器ESD二极管光电二极管
页数 文件大小 规格书
3页 84K
描述
Trans Voltage Suppressor Diode, Unidirectional, 4 Element, Silicon, ROHS COMPLIANT, SSMINI5-F3, 5 PIN

MAZM068HG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-F5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.82
配置:COMMON ANODE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F5
JESD-609代码:e6湿度敏感等级:1
元件数量:4端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.15 W
认证状态:Not Qualified表面贴装:YES
技术:ZENER端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MAZM068HG 数据手册

 浏览型号MAZM068HG的Datasheet PDF文件第2页浏览型号MAZM068HG的Datasheet PDF文件第3页 
ESD Diodes  
MAZMxxxH Series  
Silicon planar type  
Unit: mm  
1.60 0.05  
1.00 0.05  
For surge absorption circuit  
0.55 0.05  
5
4
3
Features  
Four elements anode-common type  
Power dissipation PD : 150 mW  
1
2
0.10 0.03  
0.20 0.05  
5°  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Power dissipation *  
Junction temperature  
Storage temperature  
Symbol  
PD  
Rating  
150  
Unit  
mW  
°C  
Tj  
150  
1 : Cathode 1  
2 : Anode 1, 2, 3, 4 5 : Cathode 4  
3 : Cathode 2  
4 : Cathode 3  
Tstg  
55 to +150  
°C  
SSMini5-F1 Package  
Note) : PD = 150 mW achieved with a printed circuit board.  
*
Internally connected circuit  
5
1
4
3
2
Common Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Zener voltage *  
Symbol  
VZ  
Conditions  
Min  
Typ  
Max  
Unit  
V
IZ  
Specified value  
Specified value  
Specified value  
Specified value  
Refer to the list of the  
electrical characteristics  
within part numbers  
Zener rise operating resistance  
Zener operating resistance  
Reverse current  
RZK  
RZ  
IZ  
IZ  
IR  
VR  
µA  
Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. Electrostatic breakdown voltage is 10 kV  
Test method: IEC1000-4-2 (C = 150 pF, R = 330 , Contact discharge: 10 times)  
3. : The temperature must be controlled 25°C for VZ mesurement.  
*
VZ value measured at other temperature must be adjusted to VZ (25°C)  
VZ guaranted 20 ms after current flow.  
Publication date: November 2004  
SKE00021AED  
1

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