Datasheet > MASTERGAN1

MASTERGAN1

更新时间： 2024-11-07 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
27页	524K
描述
High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

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MASTERGAN1 数据手册

MASTERGAN1

Datasheet

High power density 600V Half bridge driver with two enhancement mode GaN

HEMT

Features

•

600 V system-in-package integrating half-bridge gate driver and high-voltage

power GaN transistors:

–

QFN 9 x 9 x 1 mm package

R_DS(ON)= 150 mΩ

I_DS(MAX)= 10 A

•

Reverse current capability

Zero reverse recovery loss

UVLO protection on low-side and high-side

Internal bootstrap diode

Interlocking function

Dedicated pin for shutdown functionality

Accurate internal timing match

3.3 V to 15 V compatible inputs with hysteresis and pull-down

Overtemperature protection

Bill of material reduction

Very compact and simplified layout

Flexible, easy and fast design.

Application

•

Switch-mode power supplies

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Chargers and adapters

High-voltage PFC, DC-DC and DC-AC Converters

UPS Systems

MASTERGAN1

Product label

Solar Power

Description

The MASTERGAN1 is an advanced power system-in-package integrating a gate

driver and two enhancement mode GaN transistors in half‑bridge configuration.

The integrated power GaNs have R_DS(ON)of 150 mΩ and 650 V drain‑source

breakdown voltage, while the high side of the embedded gate driver can be easily

supplied by the integrated bootstrap diode.

The MASTERGAN1 features UVLO protection on both the lower and upper driving

sections, preventing the power switches from operating in low efficiency or

dangerous conditions, and the interlocking function avoids cross-conduction

conditions.

The input pins extended range allows easy interfacing with microcontrollers, DSP

units or Hall effect sensors.

The MASTERGAN1 operates in the industrial temperature range, -40°C to 125°C.

The device is available in a compact 9x9 mm QFN package.

DS13417 - Rev 3 - October 2020

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...27

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与MASTERGAN1相关器件

型号	品牌	获取价格	描述	数据表
MASTERGAN2	STMICROELECTRONICS	获取价格	High power density 600V Half bridge driver with two enhancement mode GaN HEMTs
MASTERGAN3	STMICROELECTRONICS	获取价格	高功率密度600 V半桥驱动器，配两个增强模式GaN HEMT
MASTERGAN4	STMICROELECTRONICS	获取价格	High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
MASTERGAN5	STMICROELECTRONICS	获取价格	High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs
MASW-000105	TE	获取价格	GaAs SP6T 2.5 V High Power Switch Dual- / Tri- / Quad-Band GSM Applications
MASW-000105_15	TE	获取价格	GaAs SP6T 2.5 V High Power Switch Dual- / Tri- / Quad-Band GSM Applications
MASW-000105-001SMB	TE	获取价格	GaAs SP6T 2.5 V High Power Switch Dual- / Tri- / Quad-Band GSM Applications
MASW-000105-TR3000	TE	获取价格	GaAs SP6T 2.5 V High Power Switch Dual- / Tri- / Quad-Band GSM Applications
MASW-000552-13210G	TE	获取价格	SPDT AlGaAs PIN Diode Switch RoHS Compliant
MASW-000555-13570G	TE	获取价格	SP5T AlGaAs PIN Diode Switch RoHS Compliant

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