Datasheet > MAGX-000025-150000-V1

MAGX-000025-150000-V1

更新时间： 2024-11-06 01:21:39

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
7页	1220K
描述
GaN on SiC HEMT Power Transistor

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MAGX-000025-150000

GaN on SiC HEMT Power Transistor

150 W, 1-2500 MHz

Rev. V1

Features

MAGX-000025-150000



GaN on SiC Transistor Technology

Broadband Unmatched Transistor

Common-Source Configuration

+50 V Typical Operation

Class AB Operation

RoHS* Compliant and 260°C Reflow Compatible

MTTF = 600 years (T_J< 200 °C)

Applications



General purpose for pulsed or CW applications

Description

The MAGX-000025-150000 is a gold-metalized

Gallium Nitride (GaN) on Silicon Carbide (SiC) RF

power transistor suitable for a variety of RF power

amplifier applications. Using state of the art wafer

fabrication processes, these high performance

transistors provide high gain, efficiency, bandwidth,

and ruggedness over a wide bandwidth for today’s

demanding application needs. High breakdown

voltages allow for reliable and stable operation under

more extreme mismatch load conditions compared

with older semiconductor technologies.

Ordering Information

Part Number

Description

MAGX-000025-150000

Flanged

1200-1400 MHz

Evaluation Board

MAGX-000025-SB2PPR

MAGX-000025-SB1PPR

2500 MHz

Evaluation Board

Functional Schematic

Pin No.

Function

Vgg/RF Input

Vdd/RF Output

Vgg/RF Input

Vdd/RF Output

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

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