Datasheet > MAGX-000035-01000X

MAGX-000035-01000X

更新时间： 2024-11-27 12:56:31

品牌	Logo	应用领域
泰科 - TE		晶体晶体管
页数	文件大小	规格书
8页	609K
描述
GaN on SiC HEMT Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MAGX-000035-01000X 数据手册

浏览型号MAGX-000035-01000X的Datasheet PDF文件第2页

浏览型号MAGX-000035-01000X的Datasheet PDF文件第3页

浏览型号MAGX-000035-01000X的Datasheet PDF文件第4页

浏览型号MAGX-000035-01000X的Datasheet PDF文件第5页

浏览型号MAGX-000035-01000X的Datasheet PDF文件第6页

浏览型号MAGX-000035-01000X的Datasheet PDF文件第7页

MAGX-000035-010000

MAGX-000035-01000S

GaN on SiC HEMT Power Transistor

10W CW, 30 MHz - 3.5 GHz

Rev. V3

Features

MAGX-000035-010000 (Flanged)

 GaN Depletion-Mode HEMT Microwave

Transistor

 Common-Source configuration

 No internal matching

 Broadband Class AB operation

 RoHS* Compliant

 +50 V Typical Operation

 MTTF = 600 years

Description

MAGX-000035-01000S (Flangeless)

The MAGX-000035-01000X is a gold-metalized

unmatched Gallium Nitride (GaN) on Silicon Carbide

RF power transistor suitable for a variety of RF

power amplifier applications. Using state of the art

wafer fabrication processes, these high performance

transistors provide high gain, efficiency, bandwidth,

and ruggedness over multiple octave bandwidths for

today’s demanding application needs.

The MAGX-000035-01000X is constructed with

either a flanged or flangeless ceramic package

which provides excellent thermal performance. High

breakdown voltages allow for reliable and stable

operation in extreme mismatched load conditions

compared with older semiconductor technologies.

Ordering Information

Part Number

Package

10 W GaN Power

Transistor (Flanged)

MAGX-000035-010000

MAGX-000035-01000S

MAGX-000035-SB2PPR

MAGX-000035-SB3PPR

1,2

Applications

Ordering Information

General purpose for pulsed or CW applications:

 Commercial Wireless Infrastructure (WCDMA,

LTE, WIMAX)

 Civilian and Military Radar

 Military and Commercial Communications

 Public Radio

10 W GaN Power

Transistor (Flangeless)

1.2-1.4 GHz Evaluation

Board (Flanged)

1.2-1.4 GHz Evaluation

Board (Flangeless)

 Industrial, Scientific and Medical

 SATCOM

 Instrumentation

 Avionics

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

12 3 4 5 6 7 8

中文翻译

下载PDF

与MAGX-000035-01000X相关器件

型号	品牌	获取价格	描述	数据表
MAGX-000035-015000	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-015000_15	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-015000-V1	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-01500P	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration
MAGX-000035-030000	TE	获取价格	GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
MAGX-000035-045000	TE	获取价格	Broadband Class AB Operation
MAGX-000035-045000_15	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-045000-V1	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-05000P	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration
MAGX-000035-09000P	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration

与MAGX-000035-01000X相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

63
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-000035-01000X

MAGX-000035-01000X 数据手册

与MAGX-000035-01000X相关器件

与MAGX-000035-01000X相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-000035-01000X

MAGX-000035-01000X 数据手册

与MAGX-000035-01000X相关器件

与MAGX-000035-01000X相关文章

您还可以找

您在本页遇到什么问题？