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MAGX-000035-045000 PDF预览

MAGX-000035-045000

更新时间: 2024-11-25 01:23:43
品牌 Logo 应用领域
泰科 - TE /
页数 文件大小 规格书
8页 946K
描述
Broadband Class AB Operation

MAGX-000035-045000 数据手册

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MAGX-000035-045000  
GaN on SiC HEMT Pulsed Power Transistor  
45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty  
Rev. V2  
Features  
MAGX-000035-045000  
GaN on SiC Depletion Mode Transistor  
Common-Source Configuration  
Broadband Class AB Operation  
Thermally Enhanced Cu/Mo/Cu Package  
RoHS* Compliant  
+50V Typical Operation  
MTTF = 600 years (TJ < 200°C)  
Application  
Civilian and Military Pulsed Radar  
Description  
The MAGX-000035-045000 is a gold metalized  
unmatched Gallium Nitride (GaN) on Silicon Carbide  
(SiC) RF power transistor optimized for civilian and  
military radar pulsed applications between DC -  
3500 MHz. Using state of the art wafer fabrication  
processes, these high performance transistors  
provide high gain, efficiency, bandwidth and  
ruggedness over a wide bandwidth for today’s  
demanding application needs. The MAGX-000035-  
045000 is constructed using a thermally enhanced  
Cu/Mo/Cu flanged ceramic package which provides  
excellent thermal performance. High breakdown  
voltages allow for reliable and stable operation in  
extreme mismatched load conditions unparalleled  
with older semiconductor technologies.  
Ordering Information  
Part Number  
Description  
MAGX-000035-045000  
Bulk Packaging  
MAGX-S10035-045000 Sample Board (2.7 - 3.5 GHz)  
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1
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.  
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  

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