Datasheet > MAGX-000035-010000

MAGX-000035-010000

更新时间： 2024-11-24 12:29:27

品牌	Logo	应用领域
泰科 - TE		晶体晶体管
页数	文件大小	规格书
8页	609K
描述
GaN on SiC HEMT Power Transistor Common-Source configuration

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MAGX-000035-010000

MAGX-000035-01000S

GaN on SiC HEMT Power Transistor

10W CW, 30 MHz - 3.5 GHz

Rev. V3

Features

MAGX-000035-010000 (Flanged)

 GaN Depletion-Mode HEMT Microwave

Transistor

 Common-Source configuration

 No internal matching

 Broadband Class AB operation

 RoHS* Compliant

 +50 V Typical Operation

 MTTF = 600 years

Description

MAGX-000035-01000S (Flangeless)

The MAGX-000035-01000X is a gold-metalized

unmatched Gallium Nitride (GaN) on Silicon Carbide

RF power transistor suitable for a variety of RF

power amplifier applications. Using state of the art

wafer fabrication processes, these high performance

transistors provide high gain, efficiency, bandwidth,

and ruggedness over multiple octave bandwidths for

today’s demanding application needs.

The MAGX-000035-01000X is constructed with

either a flanged or flangeless ceramic package

which provides excellent thermal performance. High

breakdown voltages allow for reliable and stable

operation in extreme mismatched load conditions

compared with older semiconductor technologies.

Ordering Information

Part Number

Package

10 W GaN Power

Transistor (Flanged)

MAGX-000035-010000

MAGX-000035-01000S

MAGX-000035-SB2PPR

MAGX-000035-SB3PPR

1,2

Applications

Ordering Information

General purpose for pulsed or CW applications:

 Commercial Wireless Infrastructure (WCDMA,

LTE, WIMAX)

 Civilian and Military Radar

 Military and Commercial Communications

 Public Radio

10 W GaN Power

Transistor (Flangeless)

1.2-1.4 GHz Evaluation

Board (Flanged)

1.2-1.4 GHz Evaluation

Board (Flangeless)

 Industrial, Scientific and Medical

 SATCOM

 Instrumentation

 Avionics

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

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与MAGX-000035-010000相关器件

型号	品牌	获取价格	描述	数据表
MAGX-000035-01000P_15	TE	获取价格	GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
MAGX-000035-01000P-V2	TE	获取价格	GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package
MAGX-000035-01000S	TE	获取价格	GaN on SiC HEMT Power Transistor Common-Source configuration
MAGX-000035-01000X	TE	获取价格	GaN on SiC HEMT Power Transistor
MAGX-000035-015000	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-015000_15	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-015000-V1	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-01500P	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration
MAGX-000035-030000	TE	获取价格	GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
MAGX-000035-045000	TE	获取价格	Broadband Class AB Operation

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