Datasheet > MAGX-000035-015000-V1

MAGX-000035-015000-V1

更新时间： 2024-11-28 01:14:07

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
7页	791K
描述
GaN on SiC HEMT Pulsed Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MAGX-000035-015000-V1 数据手册

浏览型号MAGX-000035-015000-V1的Datasheet PDF文件第2页

浏览型号MAGX-000035-015000-V1的Datasheet PDF文件第3页

浏览型号MAGX-000035-015000-V1的Datasheet PDF文件第4页

浏览型号MAGX-000035-015000-V1的Datasheet PDF文件第5页

MAGX-000035-015000

MAGX-000035-01500S

GaN on SiC HEMT Pulsed Power Transistor

15 W, DC - 3.5 GHz

Rev. V1

Features

MAGX-000035-015000 (Flanged)

 GaN on SiC Depletion Mode Transistor

 Common-Source Configuration

 Broadband Class AB Operation

 Thermally Enhanced Package (Flanged: Cu/W,

Flangeless: Cu)

 RoHS* Compliant

 +50V Typical Operation

 MTTF = 600 years (T_J< 200°C)

Primary Applications

 Commercial Wireless Infrastructure

(WCDMA, LTE, WiMAX)

 Air Traffic Control Radar - Commercial

 Weather Radar - Commercial

 Military Radar - Military

 Public Radio

MAGX-000035-01500S (Flangeless)

 Industrial, Scientific and Medical

 SATCOM

 Instrumentation

Description

The MAGX-000035-01500X is

gold-metalized

unmatched Gallium Nitride (GaN) on Silicon Carbide

RF power transistor suitable for a variety of RF power

amplifier applications. Using state of the art wafer

fabrication processes, these high performance

transistors provide high gain, efficiency, bandwidth,

and ruggedness over multiple octave bandwidths for

today’s demanding application needs.

Ordering Information

The MAGX-000035-01500X is constructed using a

thermally enhanced flanged (Cu/W) or flangeless

(Cu) ceramic package which provides excellent

thermal performance. High breakdown voltages allow

for reliable and stable operation in extreme

mismatched load conditions unparalleled with older

semiconductor technologies.

Part Number

Description

MAGX-000035-015000

Flanged, Bulk Packaging

MAGX-000035-01500S Flangeless, Bulk Packaging

Sample Board

MAGX-L20035-015000

(1.2 - 1.4 GHz, Flanged)

Sample Board

MAGX-L20035-01500S

(1.2 - 1.4 GHz, Flangeless)

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macomtech.com for additional data sheets and product information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

12 3 4 5 6 7

中文翻译

下载PDF

与MAGX-000035-015000-V1相关器件

型号	品牌	获取价格	描述	数据表
MAGX-000035-01500P	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration
MAGX-000035-030000	TE	获取价格	GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz
MAGX-000035-045000	TE	获取价格	Broadband Class AB Operation
MAGX-000035-045000_15	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-045000-V1	TE	获取价格	GaN on SiC HEMT Pulsed Power Transistor
MAGX-000035-05000P	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration
MAGX-000035-09000P	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration
MAGX-000035-PB1PPR	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration
MAGX-000035-PB2PPR	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration
MAGX-000035-PB3PPR	TE	获取价格	GaN on SiC D-Mode Transistor Technology Common-Source Configuration

与MAGX-000035-015000-V1相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

63
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-000035-015000-V1

MAGX-000035-015000-V1 数据手册

与MAGX-000035-015000-V1相关器件

与MAGX-000035-015000-V1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MAGX-000035-015000-V1

MAGX-000035-015000-V1 数据手册

与MAGX-000035-015000-V1相关器件

与MAGX-000035-015000-V1相关文章

您还可以找

您在本页遇到什么问题？